S8C5H30L中文资料
N-CHANNEL 30V - 0.018? - 8A SO-8P-CHANNEL 30V - 0.045? - 5A SO-8
LOW GATE CHARGE StripFET? III MOSFET
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September 2004
STS8C5H30L
Table 1: General Features
s TYPICAL R DS(on) (N-Channel) = 0.018 ?s TYPICAL R DS(on) (P-Channel) = 0.045 ?s CONDUCTION LOSSES REDUCED s SWITCHING LOSSES REDUCED s LOW THRESHOLD DRIVE
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This MOSFET is the latest development of STMi-croelectronics unique ”Single Feature Size?”strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark-able manufacturing reproducibility.
APPLICATIONS
s DC/DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
s POWER MANAGEMENT IN CELLULAR PHONES
s DC MOTOR DRIVE
Table 2: Order Codes
TYPE
V DSS R DS(on)I D STS8C5H30L (N-Channel)STS8C5H30L (P-Channel)
30 V 30 V
< 0.022 ?< 0.055 ?
8 A 5 A
PART NUMBER MARKING PACKAGE PACKAGING STS8C5H30L
S8C5H30L
SO-8
TAPE & REEL
Rev. 2
STS8C5H30L
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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 5: On/Off
Table 6: Dynamic
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
Symbol Parameter
Value
Unit
N-CHANNEL
P-CHANNEL
V DS Drain-source Voltage (V GS = 0)30V V DGR Drain-gate Voltage (R GS = 20 k ?)30
V V GS Gate- source Voltage
± 16± 16V I D Drain Current (continuous) at T C = 25°C Single Operating
8 4.2A I D Drain Current (continuous) at T C = 100°C Single Operating 6.4 3.1A I DM ( )Drain Current (pulsed)
32
16.8A P TOT Total Dissipation at T C = 25°C Dual Operating Total Dissipation at T C = 25°C Single Operating 1.62W W T j T stg
Operating Junction Temperature Storage Temperature
150-55 to 150°C °C Rthj-case Thermal Resistance Junction-case Single Operating
Dual Operating
62.578°C/W °C/W T l
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol Parameter
Test Conditions Min.Typ.
Max.
Unit V (BR)DSS Drain-source
Breakdown Voltage I D = 250 μA, V GS = 0n-ch p-ch 3030
V I DSS Zero Gate Voltage
Drain Current (V GS = 0)V DS = Max Rating
V DS = Max Rating, T C = 125°C n-ch p-ch 110μA μA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 16V V GS = ± 16V
n-ch p-ch ±100±100nA nA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 μA n-ch p-ch 11
1.6
2.5V V R DS(on)
Static Drain-source On Resistance
V GS = 10 V, I D = 4 A V GS = 10 V, I D = 2.5 A V GS = 4.5 V, I D = 4 A V GS = 4.5 V, I D = 2.5 A
n-ch p-ch n-ch p-ch
0.0180.0450.0200.070
0.0220.0550.0250.075
????
Symbol Parameter
Test Conditions Min.
Typ.Max.
Unit g fs (1)Forward
Transconductance V DS = 15 V , I D = 4 A V DS = 15 V , I D = 2.5 A n-ch p-ch 8.510S S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 0
n-ch p-ch 8571350pF pF C oss Output Capacitance n-ch p-ch 147490pF pF C rss
Reverse Transfer Capacitance
n-ch p-ch
20130
pF pF
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STS8C5H30L
ELECTRICAL CHARACTERISTICS(CONTINUED)Table 7: Switching On
Table 8: Switching Off
Table 9: Source-Drain Diodef
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.(2) Pulse width limited by safe operating area.
(3) C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Symbol Parameter
Test Conditions
Min.
Typ.Max.
Unit t d(on)t r
Turn-on Delay Time Rise Time
V DD = 15 V, I D = 4 A,R G = 4.7 ?, V GS = 4.5 V P-CHANNEL
V DD = 15 V, I D = 2 A,R G = 4.7 ?, V GS = 4.5 V
(Resistive Load see, Figure 28)
n-ch p-ch n-ch p-ch 122514.535ns ns ns ns Q g Total Gate Charge V DD = 24 V, I D = 8 A,V GS = 5 V
P-CHANNEL
V DD = 24 V, I D = 4 A,V GS = 5 V
(see, Figure 31)
n-ch p-ch 712.51016nC nC Q gs Gate-Source Charge n-ch p-ch 2.55nC nC Q gd
Gate-Drain Charge
n-ch p-ch
2.33
nC nC
Symbol Parameter
Test Conditions
Min.
Typ.Max.
Unit t d(off)t f
Turn-off Delay Time Fall Time
V DD = 15 V, I D = 4 A,R G = 4.7 ?, V GS = 4.5 V P-CHANNEL
V DD = 15 V, I D = 2.5 A,R G = 4.7 ?, V GS = 4.5 V
(Resistive Load see, Figure 28)
n-ch p-ch n-ch p-ch
23125835
ns ns ns ns
Symbol Parameter
Test Conditions
Min.
Typ.
Max.Unit I SD Source-drain Current n-ch p-ch 85A A I SDM (2)Source-drain Current (pulsed)n-ch p-ch 3220A A V SD (1)Forward On Voltage I SD = 8 A, V GS = 0I SD = 5 A, V GS = 0n-ch p-ch 1.51.2
V V t rr Reverse Recovery Time I SD = 8 A, di/dt = 100 A/μs V DD = 15V, T j = 150°C P-CHANNEL
I SD = 5 A, di/dt = 100 A/μs V DD = 15V, T j = 150°C (see test circuit, Figure 29)
n-ch p-ch 1545ns ns Q rr Reverse Recovery Charge n-ch p-ch 5.736nC nC I RRM
Reverse Recovery Current
n-ch p-ch
0.761.6
A A
STS8C5H30L
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Figure 3: .Safe Operating n-channel
Figure 6: Thermal Impedance For Complemen-
STS8C5H30L
Figure 9: Gate Charge vs Gate-Source Voltage
Figure 12: Capacitance Variations n-channel
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STS8C5H30L
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Figure 15: Safe Operating p-channel
Figure 18: Thermal Impedance for Comple-
STS8C5H30L
Figure 21: Gate Charge vs Gate-Source Volt-
Figure 24: Capacitances Variations p-channel
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STS8C5H30L
Figure 27: Unclamped Inductive Load Test Circuit
Figure 28: Switching Times Test Circuit For Resistive Load Figure 29: Test Circuit For Inductive Load Switching and Diode Recovery Times
Figure 30: Unclamped Inductive Wafeform
Figure 31: Gate Charge Test Circuit
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STS8C5H30L
Table 10: Revision History
Date Revision Description of Changes 10-Aug-20041First Revision
10-Sep-20042Complete Version
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STS8C5H30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
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