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DG3536中文资料

DG3535/DG3536

MICRO FOOT 10-Bump

NO NO

NC 3535=Example Base Part Number xxx =Data/Lot Traceabiliity Code

C IN IN COM 2

COM 1A B

C Device Marking

DG3535/DG3536

Vishay Siliconix

New Product

0.25-W Low-Voltage Dual SPDT Analog Switch

FEATURES

D Low Voltage Operation

D Low On-Resistance - r ON: 0.25 W @ 2.7 V D ?69 dB OIRR @ 2.7 V, 100 kHz D MICRO FOOT r Package D

ESD Protection >2000 V

BENEFITS

D Reduced Power Consumption D High Accuracy

D Reduce Board Space D 1.6-V Logic Compatible D

High Bandwidth

APPLICATIONS

D Cellular Phones

D Speaker Headset Switching D Audio and Video Signal Routing D PCMCIA Cards

D Battery Operated Systems D

Relay Replacement

DESCRIPTION

The DG3535/DG3536 is a sub 1-W (0.25 W @ 2.7 V ) dual SPDT analog switches designed for low voltage applications.The DG3535/DG3536 has on-resistance matching (less than 0.05 W @ 2.7 V) and flatness (less than 0.2 W @ 2.7 V) that are guaranteed over the entire voltage range. Additionally, low logic thresholds makes the DG3535/DG3536 an ideal interface to low voltage DSP control signals.

The DG3535/DG3536 has fast switching speed with break-before-make guaranteed. In the On condition, all switching elements conduct equally in both directions.Off-isolation and crosstalk is ?69 dB @ 100 kHz.

The DG3535/DG3536 is built on Vishay Siliconix’s high-density low voltage CMOS process. An eptiaxial layer is built in to prevent latchup. The DG3535/DG3536 contains the additional benefit of 2,000-V ESD protection.

As a committed partner to the community and the environment,Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For MICRO FOOT analog switching products manufactured with tin/silver/copper (SnAgCu) device terminations, the lead (Pb)-free “—E1” suffix is being used as a designator.

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

TRUTH TABLE

Logic

NC1 and NC2

NO1 and NO2

0ON OFF 1

OFF

ORDERING INFORMATION

Temp Range

Package

Part Number

-40 to 85°C

MICRO FOOT: 10-Bump (4x3, 0.5-mm Pitch, 238-m m Bump Height)

DG3535DB-T5—E1DG3535DB-T1—E1 DG3536DB-T5—E1

DG3535/DG3536

Vishay Siliconix

New Product

ABSOLUTE MAXIMUM RATINGS

Reference to GND

V+-0.3 to +6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IN, COM, NC, NO a -0.3 to (V+ + 0.3 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Current (NO, NC, COM) "300 mA . . . . . . . . . . . . . . . . . . . . . . . Peak Current "500 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (Pulsed at 1 ms, 10% duty cycle)

Storage Temperature (D Suffix)-65 to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . Package Solder Reflow Conditions b

IR/Convection 250°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD per Method 3015.7 >2 kV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation (Packages)c

MICRO FOOT: 10-Bump (4x3 mm)d 457 mW . . . . . . . . . . . . . . . . . . . . . . . . . Notes:

a.Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-nal diodes. Limit forward diode current to maximum current ratings.

b.Refer to IPC/JEDEC (J-STD-020B).

c.All bumps welded or soldered to PC Boar

d.d.Derate 5.7 mW/_C above 70_C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (V+ = 3 V)

Test Conditions Otherwise Unless Specified

Limits

?40 to 85_C

Parameter

Symbol

V+ = 3 V, "10%, V IN = 0.5 or 1.4 V e Temp a

Min b Typ c Max b

Unit

Analog Switch

Analog Signal Range d V NO , V NC ,V COM

Full 0

V+V

On-Resistance d r ON V 27 V V 06/15 V

Room Full

0.25

0.40.5r ON Flatness d

r ON Flatness V+ = 2.7 V, V COM = 0.6/1.5 V I NO , I NC = 100 mA

Room 0.15W

On-Resistance

Match Between Channels d

D r DS(on)

Room 0.05

I NO(off),I NC(off)V+ = 3.3 V, V Room Full ?2?20220Switch Off Leakage Current

I COM(off)

NO , V NC = 0.3 V/3 V

V COM = 3 V/0.3 V Room Full ?2?20220nA

Channel-On Leakage Current

I COM(on)

V+ = 3.3 V, V NO , V NC = V COM = 0.3 V/3 V

Room Full

?2?20

220

Digital Control

Input High Voltage d V INH

Full 1.4

Input Low Voltage V INL

Full 0.5

V Input Capacitance C in

Full

pF Input Current

I INL or I INH

V IN = 0 or V+

Full

m A

Dynamic Characteristics

Turn-On Time t ON

= 20 V R C Room

Full 528290Turn-Off Time

t OFF V NO or V NC = 2.0 V, R L = 50 W , C L = 35 pF

Room Full 437378

Break-Before-Make Time t d V NO or V NC = 2.0 V, R L = 50 W , C L = 35 pF Full 1

6Charge Injection d Q INJ C L = 1 nF, V GEN = 1.5 V, R GEN = 0 W Room 21pC Off-Isolation d OIRR C = 5 pF f = 100 KHz

Room ?69Crosstalk d

X TALK R L = 50 W , C L = 5 pF, f = 100 KHz Room ?69dB

N C NO(off)Room 145N O , N C Off Capacitance d C NC(off) = 0 or V+ f = 1 MHz

Room 145Channel On Capacitance C NO(on)V IN = 0 or V+, f = 1 MHz Room 406pF Channel-On Capacitance

d C NC(on)

Room

406

Power Supply

Power Supply Current

I+

V IN = 0 or V+

Room Full

0.001

1.01.0

m A

Notes:

a.Room = 25°C, Full = as determined by the operating suffix.

b.Typical values are for design aid only, not guaranteed nor subject to production testing.

c.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

d.Guarantee by design, nor subjected to production test.

e.V IN = input voltage to perform proper function.

DG3535/DG3536

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

100 mA 10 mA 1 mA 100 m A 10 m A 1 m A 100 nA

1 nA

0.00.10.20.30.40.50.60.70.80.0

0.5 1.0 1.5 2.0 2.5 3.0

0.00.10.20.30.40.50.6

0.70.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0Supply Current vs. Input Switching Frequency

I + ? S u p p l y C u r r e n t (A )

r ON vs. V COM and Supply Voltage

V COM ? Analog Voltage (V)? O n -R e s i s t a n c e (r O N W )

r ON vs. Analog Voltage and Temperature (NC1)

V COM ? Analog Voltage (V)

? O n -R e s i s t a n c e (r O N W )

?300

?250

?200?150?100?50050100150200250300?60

?40

?20

100

1010000

100000

Supply Current vs. Temperature

Temperature (_C)

100

1000

I + ? S u p p l y C u r r e n t (n A )

?60

?40

?20

100

110000

Leakage Current vs. Temperature

Temperature (_C)

100

1000

L e a k a g e C u r r e n t (p A )

10 nA

DG3535/DG3536

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

?300

?250?200?150?100?500501001502002503000.0

0.5 1.0 1.5 2.0 2.5 3.0

Charge Injection vs. Analog Voltage

V COM ? Analog Voltage (V)

Q ? C h a r g e I n j e c t i o n (p C )

0.00

0.250.500.751.001.251.501.75

2.000

Switching Threshold vs. Supply Voltage

V+ ? Supply Voltage (V)

? S w i t c h i n g T h r e s h o l d (V )

V T

100 K

?90

10 M

?70

?50

100 M

1 G

1 M

Insertion Loss, Off-Isolation Crosstalk vs. Frequency

Frequency (Hz)

0102030405060708090

100?60

?40

?20

100

Switching Time vs. Temperature

/t O N ? S w i t c h i n g T i m e (n s )

t O F F

(d B )

L o s s , O I R R , X T A L K ?30

?10

Temperature (_C)

TEST CIRCUITS

FIGURE 1.Switching Time

C L (includes fixture and stray capacitance)

Logic Input

V OUT

V+

0 V

Logic Input

Switch Output

Logic “1” = Switch On

Logic input waveforms inverted for switches that have the opposite logic sense.

V OUT +V COM

R L

R L )R ON

V INH

V INL

DG3535/DG3536

Vishay Siliconix

New Product

TEST CIRCUITS

FIGURE 2.

= 1 nF

OUT FIGURE 3.Charge Injection

C L (includes fixture and stray capacitance)

0 V

Logic Input

Switch

Output

V O V NC = V NO

V O

V INL

V INH IN

V OUT

Q = D V OUT x C L

IN depends on switch configuration: input polarity determined by sense of switch.

FIGURE 4.Off-Isolation FIGURE 5.Channel Off/On Capacitance

NO ńNC

V+

DG3535/DG3536

Vishay Siliconix

New Product

PACKAGE OUTLINE

MICRO FOOT: 10-BUMP (4 X 3, 0.5-mm PITCH, 0.238-mm BUMP HEIGHT)

NOTES (Unless Otherwise Specified):1.Bump is Lead Free Sn/Ag/Cu.2.Non-solder mask defined copper landing pad.

Laser Mark on silicon die back; back-lapped, no coating. Shown is not actual marking;sample only.

Silicon

MILLIMETERS*

INCHES Dim Min

Max

Min

Max

A 0.6880.7530.02710.0296A 10.2180.2580.00860.0102A 20.4700.4950.01850.0195b 0.3060.3460.01200.0136D 1.980 2.0200.07800.0795E 1.480

1.520

0.0583

0.0598

e 0.5 BASIC

0.0197 BASIC

0.230

0.270

0.0091

0.0106

* Use millimeters as the primary measurement.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon T echnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.wendangku.net/doc/265726319.html,/ppg?72961.