PE2301A
P-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Unit Parameter Symbol
Limit
Drain-Source Voltage V DS-20 V
Gate-Source Voltage V GS±12 V
Drain Current-Continuous I D-3 A
Drain Current -Pulsed (Note 1) I DM-10 A
Maximum Power Dissipation P D 1 W
Operating Junction and Storage Temperature Range T J,T STG-55 To 150 ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)RθJA125/W
℃
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV DSS V GS=0V I D=-250μA -20 - V
- -1 μA
Zero Gate Voltage Drain Current I DSS V DS=-20V,V GS0V -
Gate-Body Leakage Current I GSS
V GS =±12V,V DS =
0V -
- ±100 nA On Characteristics (Note 3) Gate Threshold Voltage
V GS(th) V DS =V GS ,I D =-250μA -0.45 -0.7 -1 V V GS =-4.5V, I D =
-2.5A - 85 110 m ? Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-2A -
110 140 m ? Forward Transconductance g FS V DS =-5V,I D =
-2.8A - 9.5 - S
Dynamic Characteristics (Note4) Input Capacitance C lss - 405 - PF
Output Capacitance
C oss - 75 - PF
Reverse Transfer Capacitance C rss
V DS =-10V,V GS =0V,
F=1.0MHz
- 55 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS
Turn-on Rise Time t r - 35 - nS Turn-Off Delay Time t d(off) - 30 - nS Turn-Off Fall Time t f
V DD =-10V,I D =-1A
V GS =-4.5V,R GEN =10? - 10 - nS
Total Gate Charge Q g - 3.3 12 nC Gate-Source Charge Q gs - 0.7 - nC
Gate-Drain Charge
Q gd
V DS =-10V,I D =-3A,
V GS =-2.5V
- 1.3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =
1.3A - - -1.2 V
Diode Forward Current (Note 2)
I S - - -1.3 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Figure 1:Switching Test Circuit
T J -Junction Temperature(℃)
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS V IN
V t
Figure 2:Switching Waveforms
T J -Junction Temperature(℃)
Figure 4 Drain Current
I D - Drain Current (A)
Figure 6 Drain-Source On-Resistance
P D P o w e r (W )
I D - D r a i n C u r r e n t (A ）
R d s o n O n -R e s i s t a n c e (Ω)
I D - D r a i n C u r r e n t (A )
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
T J -Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
I D - D r a i n C u r r e n t (A )
R d s o n O n -R e s i s t a n c e (Ω)
V g s G a t e -S o u r c e V o l t a g e (V )
N o r m a l i z e d O n -R e s i s t a n c e
C C a p a c i t a n c e (p F )
I s - R e v e r s e D r a i n C u r r e n t (A )
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation
Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
r (t ),N o r m a l i z e d E f f e c t i v e
T r a n s i e n t T h e r m a l I m p e d a n c e
I D - D r a i n C u r r e n t (A )
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Dimensions in Millimeters
Symbol
MIN. MAX.
A 0.900 1.150
A1 0.000 0.100
A2 0.900 1.050
b 0.300 0.500
c 0.080 0.150
D 2.800 3.000
E 1.200 1.400
E1 2.250 2.550
e 0.950TYP
e1 1.800 2.000
L 0.550REF
L1 0.300 0.500
θ 0° 8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.