IRG4PH50SPbF中文资料
07/08/08
IRG4PH50SPbF
Features
Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package Lead-Free
Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
Benefits
Standard Speed IGBT
I NSULATED GATE BIPOLAR TRANSISTOR
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PD -95525A
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Parameter
Min.Typ.Max.Units Conditions Q g
Total Gate Charge (turn-on)—167251I C = 33A Q ge Gate - Emitter Charge (turn-on)—2538nC V CC = 400V See Fig. 8Q gc Gate - Collector Charge (turn-on)—5583V GE = 15V t d(on)Turn-On Delay Time —32—t r Rise Time
—29—T J = 25°C
t d(off)Turn-Off Delay Time —8451268I C = 33A, V CC = 960V t f Fall Time
—425638V GE = 15V, R G = 5.0?E on Turn-On Switching Loss — 1.80—Energy losses include "tail"E off Turn-Off Switching Loss —19.6—mJ See Fig. 9, 10, 14E ts Total Switching Loss —21.444t d(on)Turn-On Delay Time —32—T J = 150°C,t r Rise Time
—30—I C = 33A, V CC = 960V
t d(off)Turn-Off Delay Time —1170—V GE = 15V, R G = 5.0?t f Fall Time
—1000—Energy losses include "tail"E ts Total Switching Loss
—37—mJ See Fig. 10,11,14L E Internal Emitter Inductance —13—nH Measured 5mm from package C ies Input Capacitance —3600—V GE = 0V C oes Output Capacitance
—160—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance
—
30
—? = 1.0MHz
Parameter Min.Typ.Max.Units Conditions
V (BR)CES
Collector-to-Emitter Breakdown Voltage 1200——V V GE = 0V, I C = 250μA V (BR)ECS Emitter-to-Collector Breakdown Voltage 18——V V GE = 0V, I C = 1.0 A ?V (BR)CES /?T J Temperature Coeff. of Breakdown Voltage — 1.22
—V/°C V GE = 0V, I C = 2.0 mA — 1.47
1.7 I C = 33A V GE = 15V V CE(ON)
Collector-to-Emitter Saturation Voltage — 1.75— I C = 57A See Fig.2, 5
— 1.55
— I C = 33A , T J = 150°C V GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250μA DV GE(th)/DT J Temperature Coeff. of Threshold Voltage —-11—mV/°C V CE = V GE , I C = 250μA g fe Forward Transconductance 2740
—S V CE = 100V, I C = 33A ——
250V GE = 0V, V CE = 1200V
—— 2.0V GE = 0V, V CE = 10V, T J = 25°C ——
1000V GE = 0V, V CE = 1200V, T J = 150°C I GES Gate-to-Emitter Leakage Current ——
±100nA V GE = ±20V
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
I CES Zero Gate Voltage Collector Current
V
μA
Switching Characteristics @ T J = 25°C (unless otherwise specified)
ns
ns
Pulse width ≤ 80μs; duty factor ≤ 0.1%. Pulse width 5.0μs, single shot.
Notes:
Repetitive rating; V GE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b ) V CC = 80%(V CES ), V GE = 20V, L = 10μH, R G = 5.0?,(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4PH50SPbF
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
020
40
60
0.1
1
10
f, Frequency (kHz)
L o a d C u r r
e n t (A )
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
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Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Resistance Junction Temperature
IRG4PH50SPbF
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Collector-to-Emitter Current
IRG4PH50SPbF
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960V
4X I C @
25°C
* Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
=
Fig. 14b - Switching Loss
Waveforms
Fig. 14a - Switching
Loss Test Circuit
* Driver same type as D.U.T., VC = ----V
(Dimensions are shown in milimeters (inches))
Data and specifications subject to change without notice. 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at https://www.wendangku.net/doc/351156689.html, for sales contact information.07/2008
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