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BU807中文资料

BU807中文资料
BU807中文资料

BU806BU807

MEDIUM VOLTAGE NPN FAST SWITCHING

DARLINGTON TRANSISTORS

s

STMicroelectronics PREFERRED SALESTYPES

s NPN DARLINGTONS

s LOW BASE-DRIVE REQUIREMENTS s

INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

APPLICATION s HORIZONTAL DEFLECTION FOR MONOCHROME TVs DESCRIPTION The devices are silicon epitaxial planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package.

They can be used in horizontal output stages of 110 o CRT video displays.

January 1999

ABSOLUTE MAXIMUM RATINGS

?

1/4

BU806 / BU807

THERMAL DATA

C unless otherwise specified)

ELECTRICAL CHARACTERISTICS (T case = 25 o

BU806 / BU807

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics ? 1998 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

https://www.wendangku.net/doc/344768763.html,

.

BU806 / BU807

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