DATA SHEET
Product speci?cation
File under Integrated Circuits, IC061999Nov30
INTEGRATED CIRCUITS 74AHC30; 74AHCT30 8-input NAND gate
8-input NAND gate
74AHC30; 74AHCT30
FEATURES
?ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000V MM EIA/JESD22-A115-A exceeds 200V CDM EIA/JESD22-C101 exceeds 1000V ?Balanced propagation delays
?Inputs accept voltages higher than V CC
?For AHC only: operates with CMOS input levels ?For AHCT only: operates with TTL input levels ?Output capability: standard ?I CC category: SSI
?Specified from ?40to +85°C and ?40to +125°C.DESCRIPTION
The 74AHC/AHCT30 are high-speed Si-gate CMOS
devices and are pin compatible with Low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no.7A.
The 74AHC/AHCT30 provide the 8-input NAND function.
QUICK REFERENCE DATA
GND =0V; T amb =25°C; t r =t f ≤3.0ns.
Notes
1.C PD is used to determine the dynamic power dissipation (P D in μW).
P D =C PD ×V CC 2×f i +∑(C L ×V CC 2×f o )where:f i =input frequency in MHz;f o =output frequency in MHz;∑(C L ×V CC 2×f o )=sum of outputs;C L =output load capacitance in pF;V CC =supply voltage in Volts.2.The condition is V I =GND to V CC .
SYMBOL PARAMETER
CONDITIONS TYPICAL UNIT AHC AHCT t PHL /t PLH propagation delay
A,B,C,D,E,F ,G,H to Y C L =15pF; V CC =5V
3.6 3.3ns C I input capacitance 3.0 3.0pF C O output capacitance
4.0 4.0pF C PD power dissipation capacitance
C L =50pF; f =1MHz;notes 1and 2
10
12
pF
8-input NAND gate74AHC30; 74AHCT30
FUNCTION TABLE
See note1.
Note
1.H=HIGH voltage level;
L=LOW voltage level;
X=don’t care. ORDERING INFORMATION
PINNING INPUTS OUTPUTS
A B C D E F G H Y L X X X X X X X H X L X X X X X X H X X L X X X X X H X X X L X X X X H X X X X L X X X H X X X X X L X X H X X X X X X L X H X X X X X X X L H H H H H H HΗH L
TYPE NUMBER
PACKAGES
TEMPERATURE
RANGE
PINS PACKAGE MATERIAL CODE
74AHC30D?40to+125°C14SO plastic SOT108-1 74AHCT30D14SO plastic SOT108-1 74AHC30PW14TSSOP plastic SOT402-1 74AHCT30PW14TSSOP plastic SOT402-1
PIN SYMBOL DESCRIPTION
1A data input
2B data input
3C data input
4D data input
5E data input
6F data input
7GND ground (0V)
8Y data output
9,10and13n.c.not connected
11G data input
12H data input
14V CC DC supply voltage
8-input NAND gate 74AHC30; 74AHCT30
handbook, halfpage
MNA487
30
1234567
814131211109
A B C D E F GND
Y
n.c.
n.c.G H
n.c.V CC Fig.1 Pin configuration.handbook, halfpage
MNA488
A Y 18
B 2
C 3
D 4
E 5
F 6
G 11H
12
Fig.2 Functional diagram.
handbook, halfpage
8
&
MNA489
1234561112
Fig.3 IEC logic symbol.handbook, halfpage
B
A C D
F
E
G H
MNA490
Y
Fig.4 Logic diagram.
8-input NAND gate
74AHC30; 74AHCT30
RECOMMENDED OPERATING CONDITIONS LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground =0V).Notes
1.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2.For SO-packages: above 70°C the value of P D derates linearly with 8mW/K.
For TSSOP-packages: above 60°C the value of P D derates linearly with 5.5mW/K.
SYMBOL PARAMETER CONDITIONS
74AHC 74AHCT
UNIT MIN.TYP .MAX.MIN.TYP .MAX.V CC DC supply voltage 2.0 5.0 5.5 4.5 5.0 5.5V V I input voltage 0? 5.50? 5.5V V O output voltage 0
?V CC 0?V CC V T amb
operating ambient temperature
see DC and AC characteristics per device ?40+25+85?40+25+85°C ?40+25+125?40+25+125°C t r ,t f (?t/?f)input rise and fall rates
V CC =3.3±0.3V ??100???ns/V
V CC =5±0.5V
?
?
20
?
?
20
SYMBOL PARAMETER
CONDITIONS
MIN.MAX.UNIT V CC DC supply voltage ?0.5+7.0V V I input voltage
?0.5+7.0V I IK DC input diode current V I 0.5V; note 1
??20mA I OK DC output diode current V O 0.5V or V O >V CC +0.5V; note 1?±20mA I O DC output source or sink current ?0.5V ?±25mA I CC DC V CC or GND current ?±75mA T stg storage temperature ?65+150°C P D power dissipation per package for temperature range from ?40to +125°C; note 2? 500 mW 8-input NAND gate74AHC30; 74AHCT30 DC CHARACTERISTICS Family 74AHC Over recommended operating conditions; voltages are referenced to GND (ground=0V). SYMBOL PARAMETER TEST CONDITIONS T amb(°C) UNIT OTHER V CC(V) 25?40to+85?40to+125 MIN.TYP.MAX.MIN.MAX.MIN.MAX. V IH HIGH-level input voltage 2.0 1.5?? 1.5? 1.5?V 3.0 2.1?? 2.1? 2.1?V 5.5 3.85?? 3.85? 3.85?V V IL LOW-level input voltage 2.0??0.5?0.5?0.5V 3.0??0.9?0.9?0.9V 5.5?? 1.65? 1.65? 1.65V V OH HIGH-level output voltage V I=V IH or V IL I O=?50μA 2.0 1.9 2.0? 1.9? 1.9?V I O=?50μA 3.0 2.9 3.0? 2.9? 2.9?V I O=?50μA 4.5 4.4 4.5? 4.4? 4.4?V I O=?4.0mA 3.0 2.58?? 2.48? 2.40?V I O=?8.0mA 4.5 3.94?? 3.8? 3.70?V V OL LOW-level output voltage V I=V IH or V IL I O=50μA 2.0?00.1?0.1?0.1V I O=50μA 3.0?00.1?0.1?0.1V I O=50μA 4.5?00.1?0.1?0.1V I O=4.0mA 3.0??0.36?0.44?0.55V I O=8.0mA 4.5??0.36?0.44?0.55V I I input leakage current V I=V CC or GND 5.5??0.1? 1.0? 2.0μA I OZ3-state output OFF current V I=V IH or V IL; V O=V CC or GND 5.5??±0.25?±2.5?±10.0μA I CC quiescent supply current V I=V CC or GND; I O=0 5.5?? 2.0?20?40μA C I input capacitance??310?10?10pF 8-input NAND gate74AHC30; 74AHCT30 Family 74AHCT Over recommended operating conditions; voltages are referenced to GND (ground=0V). SYMBOL PARAMETER TEST CONDITIONS T amb(°C) UNIT OTHER V CC(V) 25?40to+85?40to+125 MIN.TYP.MAX.MIN.MAX.MIN.MAX. V IH HIGH-level input voltage 4.5to 5.5 2.0?? 2.0? 2.0?V V IL LOW-level input voltage 4.5to 5.5??0.8?0.8?0.8V V OH HIGH-level output voltage V I=V IH or V IL I O=?50μA 4.5 4.4 4.5? 4.4? 4.4?V I O=?8.0mA 4.5 3.94?? 3.8? 3.70?V V OL LOW-level output voltage V I=V IH or V IL I O=50μA 4.5?00.1?0.1?0.1V I O=8.0mA 4.5??0.36?0.44?0.55V I I input leakage current V I=V IH or V IL 5.5??0.1? 1.0? 2.0μA I OZ3-state output OFF current V I=V IH or V IL; V O=V CC or GND per input pin; other inputs at V CC or GND; I O=0 5.5??±0.25?±2.5?±10.0μA I CC quiescent supply current V I=V CC or GND; I O=0 5.5?? 2.0?20?40μA ?I CC additional quiescent supply current per input pin V I=V CC?2.1V; other inputs at V CC or GND; I O=0 4.5to 5.5?? 1.35? 1.5? 1.5mA C I input capacitance??310?10?10pF 8-input NAND gate 74AHC30; 74AHCT30 AC CHARACTERISTICS Type 74AHC30 GND =0V; t r =t f ≤3.0ns. Notes 1.Typical values at V CC =3.3V. 2.Typical values at V CC =5.0V.Type 74AHCT30 GND =0V; t r =t f ≤3.0ns. Note 1.Typical values at V CC =5.0V. SYMBOL PARAMETER TEST CONDITIONS T amb (°C)UNIT WAVEFORMS C L 25 ?40to +85?40to +125MIN. TYP . MAX. MIN. MAX. MIN. MAX. V CC =3.0to 3.6V;note 1t PHL /t PLH propagation delay A,B,C,D,E,F ,G,H to Y see Figs 5and 615pF ? 5.09.5 1.011.0 1.012.0ns 50pF ? 6.7 12.0 1.0 14.5 1.0 15.5 ns V CC =4.5to 5.5V;note 2t PHL /t PLH propagation delay A,B,C,D,E,F ,G,H to Y see Figs 5and 615pF ? 3.6 6.5 1.07.5 1.08.0ns 50pF ? 4.9 8.0 1.0 9.5 1.0 10.5 ns SYMBOL PARAMETER TEST CONDITIONS T amb (°C)UNIT WAVEFORMS C L 25 ?40to +85 ?40to +125MIN. TYP. MAX.MIN. MAX. MIN.MAX. V CC =4.5to 5.5V;note 1t PHL /t PLH propagation delay A,B,C,D,E,F ,G,H to Y see Figs 5and 615pF ? 3.3 6.5 1.07.5 1.08.0ns 50pF ? 4.7 8.5 1.0 9.5 1.0 10.5 ns 8-input NAND gate 74AHC30; 74AHCT30 AC WAVEFORMS handbook, halfpage MNA491 t PHL t PLH V M V M A, B, C, D,E, F , G, H input Y output Fig.5 The input (A, B, C, D, E, F, G and H) to output (Y) propagation delays. FAMILY V I INPUT REQUIREMENTS V M INPUT V M OUTPUT AHC GND to V CC 50%V CC 50%V CC AHCT GND to 3.0V 1.5V 50%V CC Fig.6 Test circuitry for switching times. TEST S1t PLH /t PHL open t PLZ /t PZL V CC t PHZ /t PZH GND handbook, full pagewidth open GND V CC V CC V I V O MNA183 D.U.T.C L R T 1000 ? PULSE GENERATOR S1 Definitions for test circuit: C L =load capacitance including jig and probe capacitance (See Chapter “AC characteristics”);R T =termination resistance should be equal to the output impedance Z o of the pulse generator. 8-input NAND gate74AHC30; 74AHCT30 PACKAGE OUTLINES UNIT A max.A1A2A3b p c D (1)E(1)(1) e H E L L p Q Z y w vθ REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 0.7 0.6 0.7 0.38 o o 0.250.1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.0 0.4 SOT108-1 X w M θ A A1 A2 b p D H E L p Q detail X E Z e c L v M A (A )3 A 7 8 1 14 y 076E06S MS-012AB pin 1 index 0.0690.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.35 0.34 0.16 0.15 0.050 1.05 0.041 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.25 0.010.004 0.039 0.016 95-01-23 97-05-22 0 2.5 5 mm scale SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 8-input NAND gate 74AHC30; 74AHCT30 UNIT A 1A 2A 3b p c D (1)E (2)(1)e H E L L p Q Z y w v θ REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.150.05 0.950.80 0.300.19 0.20.1 5.14.9 4.54.3 0.65 6.66.2 0.40.3 0.720.38 80o o 0.13 0.1 0.2 1.0 DIMENSIONS (mm are the original dimensions)Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic interlead protrusions of 0.25 mm maximum per side are not included. 0.750.50 SOT402-1 MO-153 94-07-1295-04-04 w M b p D Z e 0.25 1 7 148 θ A A 1 A 2 L p Q detail X L (A )3 H E E c v M A X A y 0 2.5 5 mm scale TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 A max.1.10 pin 1 index 8-input NAND gate74AHC30; 74AHCT30 SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our“Data Handbook IC26; Integrated Circuit Packages”(document order number 939865290011). There is no soldering method that is ideal for all surface mount IC packages.Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Re?ow soldering Reflow soldering requires solder paste (a suspension of fine solder particles,flux and binding agent)to be applied to the printed-circuit board by screen printing,stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times(preheating,soldering and cooling)vary between 100and200seconds depending on heating method. Typical reflow peak temperatures range from 215to250°C. The top-surface temperature of the packages should preferable be kept below 230°C. Wave soldering Conventional single wave soldering is not recommended for surface mount devices(SMDs)or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed.If wave soldering is used the following conditions must be observed for optimal results: ?Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. ?For packages with leads on two sides and a pitch (e):–larger than or equal to 1.27mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; –smaller than 1.27mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. ?For packages with leads on four sides,the footprint must be placed at a45°angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering,the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4seconds at 250°C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end https://www.wendangku.net/doc/395055981.html,e a low voltage(24V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10seconds at up to 300°C. When using a dedicated tool, all other leads can be soldered in one operation within 2to5seconds between 270and320°C. 8-input NAND gate 74AHC30; 74AHCT30 Suitability of surface mount IC packages for wave and re?ow soldering methods Notes 1.All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect).For details,refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.2.These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).3.If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners.4.Wave soldering is only suitable for LQFP,TQFP and QFP packages with a pitch (e)equal to or larger than 0.8mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65mm.5.Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e)equal to or larger than 0.65mm;it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5mm.DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. PACKAGE SOLDERING METHOD WAVE REFLOW (1) BGA, LFBGA, SQFP , TFBGA not suitable suitable HBCC, HLQFP , HSQFP , HSOP , HTQFP , HTSSOP , SMS not suitable (2)suitable PLCC (3), SO, SOJ suitable suitable LQFP , QFP , TQFP not recommended (3)(4)suitable SSOP , TSSOP , VSO not recommended (5) suitable Data sheet status Objective speci?cation This data sheet contains target or goal speci?cations for product development.Preliminary speci?cation This data sheet contains preliminary data; supplementary data may be published later.Product speci?cation This data sheet contains ?nal product speci?cations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information Where application information is given, it is advisory and does not form part of the speci?cation. 8-input NAND gate74AHC30; 74AHCT30 NOTES 8-input NAND gate74AHC30; 74AHCT30 NOTES ? Philips Electronics N.V.SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 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