MEK350-02DA中文资料

Features

q International standard package with DCB ceramic base plate q Planar passivated chips q Short recovery time q Low switching losses q Soft recovery behaviour q Isolation voltage 3600 V~q

UL registered E 72873

Applications

q Antiparallel diode for high frequency switching devices

q Free wheeling diode in converters and motor control circuits q Inductive heating and melting

q Uninterruptible power supplies (UPS)q

Ultrasonic cleaners and welders

Advantages

q High reliability circuit operation q Low voltage peaks for reduced protection circuits q Low noise switching q

Low losses

Dimensions in mm (1 mm = 0.0394")

0.531.297550375356180030003600

-40...+150-40...+125

110

288002930023300238002400264021602380150

12.79.6502.25-2.75/20-254.50-5.50/40-481500.800.98260

0.921.070.2280.143

3

280x I FAVM rating includes reverse blocking losses at T VJM , V R = 0.6 V RRM , duty cycle d = 0.5Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

300150

200100920015

911

875123

V RSM V RRM

Type

V V 200

200

MEK 350-02DA

Symbol Test Conditions

Maximum Ratings

I FRMS

T C =°C

A I FAVM ??x T C =°C; rectangular, d = 0.5

A I FRM t P < 10 m s; rep. rating, pulse width limited by T VJM A I FSM

T VJ = 45°C;

t = 10 ms (50 Hz), sine A t = 8.3 ms (60 Hz), sine

A T VJ = 150°C;t = 10 ms (50 Hz), sine

A t = 8.3 ms (60 Hz), sine

A I 2t

T VJ = 45°C;

t = 10 ms (50 Hz), sine A 2s t = 8.3 ms (60 Hz), sine

A 2s T VJ = 150°C;t = 10 ms (50 Hz), sine

A 2s t = 8.3 ms (60 Hz), sine

A 2s T VJ °C T stg °C T Smax °C P tot T C = 25°C

W V ISOL 50/60 Hz, RMS t = 1 min V~I ISOL ￡ 1 mA t = 1 s V~

M d Mounting torque (M6)

Nm/lb.in.Terminal connection torque (M6)Nm/lb.in.

d S Creeping distanc

e on surface mm d A Strike distance through air

mm a Maximum allowable acceleration

m/s 2Weight g

Symbol Test Conditions Characteristic Values (per diode)

typ.max.

I R

T VJ = 25°C V R = V RRM

mA T VJ = 25°C V R = 0.8 ? V RRM mA T VJ = 125°C V R = 0.8 ? V RRM mA V F

I F = A;T VJ =125°C V T VJ =25°C V I F = A;T VJ =125°C V T VJ

=25°C

V V T0

For power-loss calculations only V r T m W R thJH DC current K/W R thJC

DC current

K/W t rr I F = A T VJ = 100°C ns I RM V R = V T VJ = 25°C A -di/dt = A/m s

T VJ = 100°C

A

Fast Recovery Epitaxial Diode (FRED) Module

MEK 350-02 DA

V RRM =200 V I FAVM =356 A t rr =150 ns

1

2

3

0.0

0.4

0.8

050100150200250300350400I F A Constants for Z thJS calculation:i R thi (K/W)t i (s)1 0.0020.082 0.0080.0243 0.0540.1124

0.164

0.464

Fig. 3Peak reverse current I RM

versus -di F /dt

Fig. 2Reverse recovery charge Q r

versus -di F /dt

Fig. 1Forward current I F versus

voltage drop V F per leg

Fig. 6Peak forward voltage V FR and t fr

versus di F /dt T VJ =125°C T VJ =25°C