Features
? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Lead Free By Design/RoHS Compliant (Note 1) ? "Green" Device (Note 2) ? Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
? Case: SO-8 ? Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 ? Moisture Sensitivity: Level 1 per J-STD-020 ? Terminal Connections: See Diagram Below ? Marking Information: See Page 5 ? Ordering Information: See Page 5 ? Weight: 0.072 grams (approximate)
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Symbol Value Unit
Drain-Source Voltage V DSS -30 V Gate-Source Voltage
V GSS
±25 V Continuous Drain Current (Note 3) Steady State (V GS = -4.5)
T A = 25°C T A = 85°C
I D -7.3
-4.7
A
Pulsed Drain Current (Note 4) I DM
-80 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P D
1.3 W Thermal Resistance, Junction to Ambient @T A = 25°C R θJA
96.5 °C/W Operating and Storage Temperature Range T J , T STG
-55 to +150 °C Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at https://www.wendangku.net/doc/4f3044124.html,/products/lead_free/index.php.
3. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design.
4. Repetitive rating, pulse width limited by junction temperature.
Top View
Top View
Internal Schematic
S D D G
D D
S S
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage
BV DSS -30 - - V V GS = 0V, I D = -1mA Zero Gate Voltage Drain Current T J = 25°C I DSS - - -1.0 μA V DS = -30V, V GS
= 0V Gate-Source Leakage
I GSS - - ±100 nA V GS = ±25V, V DS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage
V GS(th) -1.0 -1.7 -2.5 V V DS = V GS , I D = -250μA
Static Drain-Source On-Resistance R DS (ON) - 13 16 m Ω V GS = -20V, I D
= -11A
15 20 V GS = -10V, I D = -10A
21 29 V GS = -5V, I D = -5A
Forward Transfer Admittance |Y fs | - 22 - S V DS = -5V, I D = -10A Diode Forward Voltage
V SD - -0.74 -1.0 V V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C iss - 1614 - pF
V DS = -15V, V GS = 0V,
f = 1.0MHz
Output Capacitance
C oss - 226 - pF
Reverse Transfer Capacitance C rss - 214 - pF Gate Resistance
R g - 6.8 - Ω V DS = 0V, V GS = 0V, f = 1MHz Total Gate Charge at 10V Q g - 35.4 - nC V GS = -10V, V DS = -15V, I D = -10A Total Gate Charge at 5V Q g - 18.9 - nC
V GS = -5V, V DS = -15V,
I D = -10A
Gate-Source Charge Q gs - 4.6 - nC
Gate-Drain Charge Q gd - 5.7 - nC Turn-On Delay Time t D(on) - 8.6 - ns V DS = -15V, V GS = -10V, R L = 1.5?, R GEN = 3?, Turn-On Rise Time t r - 12.7 - ns Turn-Off Delay Time t D(off) - 44.9 - ns Turn-Off Fall Time
t f
- 22.8 - ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
Fig. 1 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)DS -I , D R A I N C U R R E N T (A )
D Fig. 2 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)GS -I , D R A I N C U R R E N T (A )
D
Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)D R , D R A I N -S O U R C E O N -R E S I S T A N C E ()
D S (O N )Ω0
0.010.02
0.03
0.04
0.05
0.06
-I , DRAIN CURRENT (A)D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature
R , D R A I N -S O U R C E O N -R E S I S T A N C E ()
D S (O N )Ω
Fig. 5 On-Resistance Variation with Temperature T , AMBIENT TEMPERATURE (°C)
A R , D R A I N -S O U R C E O N -R E S I S T A N C E (N O R M A L I Z E D )
D S O N
R , D R A I N -S O U R C E O N -R E S I S T A N C E (N O R M A L I Z E D )
D S O N Fig. 6 On-Resistance Variation with T emperature
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient T emperature
T , AMBIENT TEMPERATURE (°C)
A -V , G A T E T H R E S H O L D V O L T A G E (V )
G S
(T H )Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)SD -I , S O U R C E C U R R E N T (A )
S
10
100
1,000
10,000
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)DS
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS -I , L E A K A
G E C U R R E N T (n A )
D S S Q , TOTAL GAT
E CHARGE (nC)
g V , G A T E -T H R E S H O L D V O L T A G E (V )
G S (T H )Fig. 11 Gate Threshold Voltage vs. Total Gate Charge
Fig. 12 Transient Thermal Response
t , PULSE DURATION TIME (s)1r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E
Ordering Information (Note 7)
Part Number Case Packaging
DMG4435SSS-13
SO-8 2500 / Tape & Reel
Notes:
7. For packaging details, go to our website at https://www.wendangku.net/doc/4f3044124.html,/datasheets/ap02007.pdf.
Marking Information
Package Outline Dimensions
Suggested Pad Layout
SO-8
Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82
θ
0° 8° All Dimensions in mm
Dimensions
Value (in mm)
X 0.60 Y 1.55 C1 5.4 C2
1.27
G4435SS
Logo Part no.
Xth week: 01~53
Gauge Plane Seating Plane
Detail ‘A’X
C2
Y
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DMG4435SSS-13