2SK2640中文资料
2SK2640-01MR
N-channel MOS-FET
FAP-IIS Series 500V 0,9? 10A 50W
>
-High Speed Switching
-Low On-Resistance
-No Secondary Breakdown -Low Driving Power -High Voltage
-V GS = ± 30V Guarantee -Repetitive Avalanche Rated
>Applications
-Switching Regulators -UPS
-DC-DC converters
-General Purpose Power Amplifier
>Maximum Ratings and Characteristics > Equivalent Circuit
-Absolute Maximum Ratings (T
C =25°C), unless otherwise specified
Item Symbol Rating Unit Drain-Source-Voltage V DS 500 V Continous Drain Current I D 10 A Pulsed Drain Current I D(puls) 40 A Gate-Source-Voltage V GS ±30 V Repetitive or Non-Repetitive (T ch ≤ 150°C) I AR 10 A Avalanche Energy E AS 77,6 mJ Max. Power Dissipation P D 50 W Operating and Storage Temperature Range T ch 150 °C
T stg -55 ~ +150 °C
-Electrical Characteristics (T C =25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V (BR)DSS I D =1mA V GS =0V 500 V Gate Threshhold Voltage V GS(th) I D =1m A V DS=V GS 3,5 4,0 4,5 V Zero Gate Voltage Drain Current I DSS V DS =500V T ch =25°C 10 500 μA
V GS =0V T ch =125°C 0,2 1,0 mA
Gate Source Leakage Current I GSS V GS =±30V V DS =0V 10 100 nA Drain Source On-State Resistance R DS(on) I D =5A V GS =10V 0,73 0,90 ?Forward Transconductance g fs I D =5A V DS =25V 2,5 5 S Input Capacitance C iss V DS =25V 950 1450 pF Output Capacitance C oss V GS =0V 180 270 pF Reverse Transfer Capacitance C rss f=1MHz 80 120 pF Turn-On-Time t on (t on =t d(on)+t r ) t d(on)V CC =300V 25 40 ns
t r I D =10A 70 110 ns
Turn-Off-Time t off (t on =t d(off)+t f ) t d(off)V GS =10V 70 110 ns
t f R GS =10 ? 45 70 ns
Avalanche Capability I AV L = 100μH T ch =25°C 10 A Diode Forward On-Voltage V SD I F =2xI DR V GS =0V T ch =25°C 1,1 1,65 V Reverse Recovery Time t rr I F =I DR V GS =0V 450 ns
Reverse Recovery Charge Q rr -dI F /dt=100A/μs
T ch =25°C 5,5 μC - Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to air 62,5 °C/W
R th(ch-c) channel to case 2,5 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - https://www.wendangku.net/doc/6f6792055.html, - 11/98
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N-channel MOS-FET
2SK2640-01MR
500V
0,9?
10A 50W
FAP-IIS Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. T ch
Typical Transfer Characteristics
↑
I D =f(V DS ); 80μs pulse test; T C =25°C
↑
R DS(on) = f(T ch ); I D =5A; V GS =10V
↑
I D =f(V GS ); 80μs pulse test; V DS =25V; T ch =25°C
I D [A ]
1
R D S (O N ) [?]
2I D [A ]
3
V DS [V]
→
T ch [°C]
→
V GS [V]
→
Typical Drain-Source On-State-Resistance vs. I D
Typical Forward Transconductance vs. I D
Gate Threshold Voltage vs. T ch
↑
R DS(on)=f(I D ); 80μs pulse test; T C =25°C
↑
g fs =f(I D ); 80μs pulse test; V DS =25V; T ch =25°C
↑
V GS(th)=f(T ch ); I D =1mA; V DS =V GS
R D S (O N ) [?]
4g f s [S ]
5V G S (t h ) [V ]
6
I D [A]
→
I D [A]
→
T ch [°C]
→
Typical Capacitances vs. V DS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
↑
C=f(V DS ); V GS =0V; f=1MHz
↑
V GS =f(Qg); I D =10A; Tc=25°C
↑
↑
I F =f(V SD ); 80μs pulse test; V GS =0V
C [F ]
7V D S [V ]
8V G S [V ]
I F [A ]
9
V DS [V]
→
Qg [nC]
→
V SD [V]
→
Avalanche Energy Derating
Safe Operation Area
E as =f(starting T ch ); V CC =50V; I AV =10A
I D =f(V DS ): D=0,01, Tc=25°C
↑
Z t h (c h -c ) [K /W ]
Transient Thermal impedance
↑
10↑
12
Z thch =f(t) parameter:D=t/T
E a s [m J ]
I D [A ]
Starting T ch [°C]
→
V DS [V]
→
t [s]
→
This specification is subject to change without notice!
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