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IRG4BC30KD中文资料

Parameter

Max.

Units

V CES

Collector-to-Emitter Voltage 600V

I C @ T C = 25°C Continuous Collector Current 28I C @ T C = 100°C Continuous Collector Current 16I CM Pulsed Collector Current Q

58A

Clamped Inductive Load Current R 58I F @ T C = 100°C Diode Continuous Forward Current 12I FM Diode Maximum Forward Current 58t sc Short Circuit Withstand Time 10μs V GE

Gate-to-Emitter Voltage

± 20V P D @ T C = 25°C Maximum Power Dissipation 100P D @ T C = 100°C Maximum Power Dissipation 42

T J Operating Junction and

-55 to +150

T STG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw.

10 lbf?in (1.1 N?m)

IRG4BC30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

V CES = 600V

V CE(on) typ. = 2.21V

@V GE = 15V, I C = 16A

Short Circuit Rated

UltraFast IGBT

4/24/2000

PD -91595A

Parameter Min.

Typ.

Max.

Units

R θJC Junction-to-Case - IGBT –––––– 1.2R θJC Junction-to-Case - Diode

–––––– 2.5°C/W

R θCS Case-to-Sink, flat, greased surface

–––0.50–––R θJA Junction-to-Ambient, typical socket mount ––––––80Wt

Weight

–––

2 (0.07)

–––

g (oz)

Thermal Resistance

Absolute Maximum Ratings

Features

? High short circuit rating optimized for motor control, t sc =10μs, @360V V CE (start), T J = 125°C, V GE = 15V

? Combines low conduction losses with high switching speed

? previous generations

? IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes

? Latest generation 4 IGBTs offer highest power density motor controls possible

? HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

? This part replaces the IRGBC30KD2 and IRGBC30MD2 products

? For hints see design tip 97003

Benefits

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IRG4BC30KD

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Parameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—67100I C = 16A Q ge Gate - Emitter Charge (turn-on)—1116nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—2537V GE = 15V t d(on)Turn-On Delay Time —60—t r Rise Time —42—T J = 25°C

t d(off)Turn-Off Delay Time —160250I C = 16A, V CC = 480V t f Fall Time —80120V GE = 15V, R G = 23?E on Turn-On Switching Loss —0.60—Energy losses include "tail"E off Turn-Off Switching Loss —0.58—mJ and diode reverse recovery E ts Total Switching Loss — 1.18 1.6See Fig. 9,10,14t sc Short Circuit Withstand Time 10——μs V CC = 360V, T J = 125°C

V GE = 15V, R G = 10? , V CPK < 500V

t d(on)Turn-On Delay Time —58—T J = 150°C,See Fig. 11,14t r

Rise Time

—42—I C = 16A, V CC = 480V

t d(off)Turn-Off Delay Time —210—V GE = 15V, R G = 23?t f Fall Time

—160—Energy losses include "tail"E ts Total Switching Loss

— 1.69—mJ and diode reverse recovery L E Internal Emitter Inductance —7.5—nH Measured 5mm from package C ies Input Capacitance —920—V GE = 0V C oes Output Capacitance

—110—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —27—? = 1.0MHz t rr Diode Reverse Recovery Time —4260ns T J = 25°C See Fig.—80120T J = 125°C 14 I F = 12A I rr Diode Peak Reverse Recovery Current — 3.5 6.0A T J = 25°C See Fig.— 5.610T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —80180nC T J = 25°C See Fig.—220600T J = 125°C 16 di/dt = 200Aμs di (rec)M /dt

Diode Peak Rate of Fall of Recovery —180—A/μs T J = 25°C See Fig.During t b

—

160—T J = 125°C 17

Parameter Min.Typ.Max.Units Conditions

V (BR)CES Collector-to-Emitter Breakdown Voltage S 600——V V GE = 0V, I C = 250μA ?V (BR)CES /?T J Temperature Coeff. of Breakdown Voltage —0.54—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 2.21 2.7

I C = 16A V GE = 15V

— 2.88—V I C = 28A

See Fig. 2, 5— 2.36—

I C = 16A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250μA ?V GE(th)/?T J Temperature Coeff. of Threshold Voltage —-12—mV/°C

V CE = V GE , I C = 250μA g fe

Forward Transconductance T 5.48.1—S V CE = 100V, I C = 16A I CES Zero Gate Voltage Collector Current ——250μA

V GE = 0V, V CE = 600V

——2500

V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop — 1.4 1.7V

I C = 12A See Fig. 13— 1.3 1.6

I C = 12A, T J = 150°C I GES Gate-to-Emitter Leakage Current ——±100nA

V GE = ±20V

Switching Characteristics @ T J = 25°C (unless otherwise specified)

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

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Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I RMS of fundamental)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

IRG4BC30KD

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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs. Case

Temperature

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Resistance Junction Temperature

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

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Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

Collector-to-Emitter Current

110

100

0.4

0.8

1.2

1.6

2.0

2.4

F I n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )

Fo rwa rd Voltage Drop - V (V)

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Fig. 14 - Typical Reverse Recovery vs. di f /dt

Fig. 15 - Typical Recovery Current vs. di f /dt

Fig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt

200

400

600

100

1000

di /dt - (A/μs)R R Q - (n C )

100

1000

10000

100

1000

f d i /d t - (A /μs)

d i (r

e c )M /d t

- (A /μs )

120

160

100

1000

di /dt - (A/μs)t - (n s )

r 1

100

1000

di /dt - (A/μs)I - (A )

I R R M

IRG4BC30KD

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Fig. 18a - Test Circuit for Measurement of

I LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t f

t1t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

E off , t d(off), t f

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E on , t d(on), t r

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E rec , t rr , Q rr , I rr

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V g G A T E S IG NA L

DE V ICE U NDE R T E S T

CUR RE N T D.U.T.

V O LT A G E IN D.U.T.

CUR RE N T IN D1

t0t1t2

Figure 19. Clamped Inductive Load Test

Circuit Figure

20. Pulsed Collector Current

Test Circuit

480V

4 X I C @25°C

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

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Notes:

Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)

R V CC =80%(V CES ), V GE =20V, L=10μH, R G = 23? (figure 19)S Pulse width ≤ 80μs; duty factor ≤ 0.1%.T Pulse width 5.0μs, single shot.

Case Outline TO-220AB

0.55 (.022)0.46 (.018)

3 X

2.92 (.115)2.64 (.104)

1.32 (.052)1.22 (.048)

- B -

4.69 (.185)4.20 (.165)

3.78 (.149)3.54 (.139)

- A -6.47 (.255)6.10 (.240)

1.15 (.045) M IN

4.06 (.160)3.55 (.140)3 X

3.96 (.160)3.55 (.140)

3 X 0.93 (.037)0.69 (.027)

0.36 (.014) M B A M

10.54 (.415)10.29 (.405)

2.87 (.113)2.62 (.103)

15.24 (.600)14.84 (.584)

14.09 (.555)13.47 (.530)

1.40 (.055)1.15 (.045)3 X

2.54 (.100)

1 2 3

CONFORMS TO JEDEC OUTLINE TO-220AB

D im e ns io ns in M illim e ters a nd (In c he s)

LE A D A S S IG N M E N T S 1 - G A TE

2 - C O LLE C TO R

3 - EM IT TE R

4 - C O LLE C TO R

N O TE S :

1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.

2 C O N TR O LLIN G D IM E N S IO N : IN C H.

3 D IM E N S IO N S A R E S H O W N M ILLIM E TE R S (IN C H

ES ).

4 C O N FO R M S TO JE D E C O U TLIN E T O -220AB.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 10/00