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BAS286-GS08中文资料

BAS286

Document Number 85502Rev. 1.7, 28-Jul-06

Vishay Semiconductors

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9612009

Small Signal Schottky Diode

Features

?Integrated protection ring against static discharge

?Very low forward voltage

?Lead (Pb)-free component

?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications

?Applications where a very low forward voltage is required

Mechanical Data

Case: QuadroMELF Glass case (SOD80)Weight: approx. 33.7 mg Cathode Band Color: Black Packaging Codes/Options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box

Parts Table

Absolute Maximum Ratings

T amb = 25°C, unless otherwise specified

Thermal Characteristics

T amb = 25°C, unless otherwise specified

Part

Ordering code

T ype Marking

Remarks

BAS286

BAS286-GS18 or BAS286-GS08

-T ape and Reel

Parameter

T est condition

Symbol Value Unit Reverse voltage

V R 50V Peak forward surge current t p = 10 ms I FSM 5A Repetitive peak forward current t p ≤ 1 s

I FRM 500mA Forward continuous current I F 200mA Average forward current

I FAV

200

Parameter

T est condition

Symbol Value Unit Thermal resistance junction to ambient air on PC board

50 mm x 50 mm x 1.6 mm R thJA 320K/W Junction temperature T j 125°C Storage temperature range

T stg

- 65 to + 150

°C

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Document Number 85502

Rev. 1.7, 28-Jul-06

BAS286

Vishay Semiconductors Electrical Characteristics

T amb = 25°C, unless otherwise specified

Typical Characteristics

T amb = 25°C, unless otherwise specified

Parameter

Test condition

Symbol Min

Typ.

Max Unit Forward voltage

I F = 0.1 mA V F 300mV I F = 1 mA V F 380mV I F = 10 mA V F 450mV I F = 30 mA V F 600mV I F = 100 mA

V F 900mV Reverse current V R = 40 V

I R 5μA Diode capacitance

V R = 1 V , f = 1 MHz

C D

Figure 1. Max. Reverse Power Dissipation vs.

Junction Temperature

Figure

2. Reverse Current vs. Junction Temperature 15827

5010015020025030035040045050025

100

125

150

T j - J u nction Temperat u re (°C)P - R e v e r s e P o w e r D i s s i p a t i o

n (m W )

R 110

100

1000

10000

5075100125150

15828

I - R e v e r s e

C u r r e n t (μA )

R T j - J u nction Temperat u re (°C)Figure 3. Forward Current vs. Forward Voltage

Figure 4. Diode Capacitance vs. Reverse Voltage

15829

00.5 1.0 1.5

0.1

100

1000

I - F o r w a r d C u r r e n t (A )

F V F - For w ard V oltage (V )

15830

123456789100.1110100

V R - Re v erse V oltage (V )

C -

D i o d e C a p a c i t a n c e (p F )

BAS286

Document Number 85502Rev. 1.7, 28-Jul-06

Vishay Semiconductors

https://www.wendangku.net/doc/734893264.html,

Package Dimensions in mm (Inches): SOD80

https://www.wendangku.net/doc/734893264.html, 4Document Number 85502

Rev. 1.7, 28-Jul-06

BAS286

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000

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Revision: 18-Jul-08

Disclaimer

Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

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