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STP3NC70ZFP中文资料

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June 2001

STP3NC70Z STP3NC70ZFP

N-CHANNEL 700V - 4.1? - 2.5A TO-220/TO-220FP

Zener-Protected PowerMESH?III MOSFET

(1) I SD ≤2.5A, di/dt ≤100A/μs, V DD ≤ V (BR)DSS , T j ≤ T JMAX

(*) Limited by Maximum Temperature allowed

s TYPICAL R DS (on) = 4.1?

EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES s 100% AVALANCHE TESTED

s VERY LOW GATE INPUT RESISTANCE s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY ? Power MOSFETs for very high voltage exhibits unsur-passed on-resistance per unit area while integrat-ing back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capa-bility with higher ruggedness performance as re-quested by a large variety of single-switch applications.

APPLICATIONS

s SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS

(?)Pulse width limited by safe operating area

TYPE V DSS R DS(on)I D STP3NC70Z STP3NC70ZFP

700V 700V

< 4.7?< 4.7?

2.5 A 2.5 A

Symbol Parameter

Value

Unit STP3NC70Z

STP3NC70ZFP

V DS Drain-source Voltage (V GS = 0)700V V DGR Drain-gate Voltage (R GS = 20 k ?)700V V GS Gate- source Voltage

± 25

V I D Drain Current (continuos) at T C = 25°C 2.5 2.5 (*)A I D Drain Current (continuos) at T C = 100°C 1.6 1.6 (*)A I DM (q )Drain Current (pulsed)1010A P TOT Total Dissipation at T C = 25°C 6535W Derating Factor

0.52

0.28W/°C I GS Gate-source Current (DC)

±50mA V ESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5K ?) 1.5KV dv/dt (1)Peak Diode Recovery voltage slope 3

V/ns V ISO Insulation Withstand Voltage (DC)-2500V T stg Storage Temperature

–65 to 150

°C T j

Max. Operating Junction Temperature

150

°C

STP3NC70Z/STP3NC70ZFP

2/10

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF

ON (1)

DYNAMIC

TO-220

TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.92

3.57

°C/W Rthj-amb

Thermal Resistance Junction-ambient Max

62.5°C/W T l

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol Parameter

Max Value

Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)

2.5A E AS

Single Pulse Avalanche Energy

(starting T j = 25 °C, I D = I AR , V DD = 50 V)

150

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V (BR)DSS

Drain-source

Breakdown Voltage

I D = 250 μA, V GS = 0700

V ?BV DSS /?T J Breakdown Voltage Temp.

Coefficient

I D = 1 mA, V GS = 00.8

V/°C I DSS Zero Gate Voltage

Drain Current (V GS = 0)V DS = Max Rating

1μA V DS = Max Rating, T C = 125 °C 50μA I GSS

Gate-body Leakage Current (V DS = 0)

V GS = ±20V

±10

μA

Symbol Parameter

Test Conditions

Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250μA 3

45V R DS(on)

Static Drain-source On Resistance

V GS = 10V, I D = 1.25 A

4.1

4.7

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs (1)Forward Transconductance V DS > I D(on) x R DS(on)max, I D =1.25A

2S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = 0

530pF C oss Output Capacitance 50pF C rss

Reverse Transfer Capacitance

3/10

STP3NC70Z/STP3NC70ZFP

ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

GATE-SOURCE ZENER DIODE

Note: 1.Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

3.?V BV = αT (25°-T) BV GSO (25°)

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)Turn-on Delay Time V DD = 350 V, I D = 1.25 A R G =4.7? V GS = 10V (see test circuit, Figure 3)14ns t r Rise Time 11ns Q g Total Gate Charge V DD = 560V, I D = 2.5A,V GS = 10V

1724nC Q gs Gate-Source Charge 4nC Q gd

Gate-Drain Charge

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t r(Voff)Off-voltage Rise Time

V DD = 560V, I D = 2.5 A, R G =4.7?, V GS = 10V (see test circuit, Figure 5)

16ns t f Fall Time 33ns t c

Cross-over Time

Symbol Parameter

Test Conditions

Min.

Typ.

Max.Unit I SD Source-drain Current 2.5A I SDM (2)Source-drain Current (pulsed)10A V SD (1)Forward On Voltage I SD = 2.5 A, V GS = 0 1.6

V t rr Reverse Recovery Time I SD = 2.5 A, di/dt = 100A/μs, V DD = 27V, T j = 150°C (see test circuit, Figure 5)

175ns Q rr Reverse Recovery Charge 0.6μC I RRM

Reverse Recovery Current

7.5

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit BV GSO Gate-Source Breakdown Voltage

Igs=± 1mA (Open Drain)25

V αT Voltage Thermal Coefficient T=25°C Note(3) 1.310-4/°C Rz

Dynamic Resistance

I D = 50 mA, V GS = 0

90?

STP3NC70Z/STP3NC70ZFP

4/10

Safe Operating Area for TO-220

STP3NC70Z/STP3NC70ZFP Gate Charge vs Gate-source Voltage

5/10

STP3NC70Z/STP3NC70ZFP

Source-drain Diode Forward Characteristics

6/10

7/10

STP3NC70Z/STP3NC70ZFP

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 1:

Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

STP3NC70Z/STP3NC70ZFP

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STP3NC70Z/STP3NC70ZFP

9/10

STP3NC70Z/STP3NC70ZFP

10/10Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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