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外文资料翻译译文

外文资料翻译译文
外文资料翻译译文

附件1:外文资料翻译译文

恒流源

电流源是电气或电子装置,可提供或吸收电流。一个电流源是一个电压源双。术语恒流源有时用来从一个负电压电源馈来源。图1显示了一个理想的电流源驱动的电阻负载的原理图。

图1理想电流源

1、理想电流源

在电路理论,理想电流源电路元件的电流通过时与其两端的电压无关。这是一个数学模型。如果通过一个理想的电流源电流可以指定独立于任何其他变量的电路,它被称为一个独立的电流源。相反,如果其他一些电压或电路中的电流通过一个理想电流源的电流决定,它被称为从属或控制的电流源。这些源符号,如图2所示。

图2各种电流源符号

一个独立的电流源与零电流是相同的理想开路。基于这个原因,一个理想电流源内阻是无限的。在一个理想的电流源的电压是完全取决于它的连接电路。当连接到短路,存在零电压,从而零功率交付。当连接到负载电阻两端的电压接近源的负载电阻接近无穷大(开路)。因此,一个理想的电流源可提供无限的能量

将代表无限的能源来源。连接的理想开路理想非零电流源是无效的,在电路的电路方程分析将是自相矛盾的,例如,5 = 0。

没有真正的电流源是理想的(不存在无限的能源),并且所有的有限的内部电阻(没有人能提供无限的电压)。然而,内部电阻电流源建模的有效结合电路分析与理想电流源非零并联电阻(诺顿等效电路)。

2、电阻电流源

最简单的电流源包括一个与一个电阻器系列电压源。目前从这样的来源可以是由两端的电压源电压比电阻器的电阻提供。对于一个几近完美的电流源,这个电阻值应该是非常大的,但是这意味着,在规定的电流,电压源必须是非常大的。因此,效率低(由于功率的电阻损耗),它通常是不切实际的建好这样的电流源。尽管如此,在很多情况下,这种电路将提供足够的性能时指定的电流和负载电阻小。例如,与一个4.7K的欧姆电阻器系列5V的电压源将提供一个大约1mA的恒定电流(± 5%),以在50至450欧姆负载电阻范围。

3、主动电流源

主动电流源在电子电路中的许多重要的应用。(电流)稳定电阻电流源通常用于在模拟集成电路的欧姆电阻的地方产生的电流而不会导致一个在信号路径的电流源连接点的衰减。一个双极晶体管的集电极,一个场效应晶体管,或一个真空管自然表现为(或汇漏电流源盘)当正确连接到外部的能源来源(如电力供应),因为输出这些设备的高阻抗,自然是当电流源配置中使用。

4、结型场效应管和N - FET电流源

一款JFET可作为一所捆绑的大门,它的源电流源。目前则是流动的FET的IDSS的。这些就可以买到这个已经在此设备被称为电流稳压二极管或恒定电流二极管或限流二极管(CLD)的案件有关。一个增强型N沟道MOSFET,可用于下列电路

5、简单晶体管电流源

图3显示了一个典型的恒定电流源(CCS)的。 DZ1是一个齐纳二极管,当这种反向偏置(所示电路),它有一个恒定的电压上,不论是流经它的电流下降。因此,只要齐纳电流(输出型)超过一定水平(称为维持电流),对面的齐纳二极管(VZ)的电压将保持不变。电阻R1用品齐纳电流和基极电流(IB)的的NPN

晶体管(Q1)。恒定纳电压是适用于整个Q1和发射极电阻R2基地。电路的操作如下:

R2的(VR2)电压由下式给出VE- VBE 中,在VBE 中是Q1基地发射极下降。

Q1的发射极电流,也是经过R2的电流由下式给出22)(22R V V R V I I BE E R E R -==

=

图3典型恒流源

由于VE 不变,VBE 中也(大约)某一温度恒定,可以得出VR2是恒定的,所以IE 也不变。由于晶体管的作用,发射极电流IE 是非常接近等于集电极电流的晶体管集成电路(反过来,是当前通过负载)。因此,负载电流为常数(忽略了晶体管,由于早期的效果输出电阻)和电路作为一个恒定电流源的运作。只要温度保持不变(或变化不大),负载电流将是电源电压,R1和晶体管的增益无关。 R2的允许负载电流在任何可取的值集,并计算2R2R BE E I V V -=或2

65.02R Z I V R -=,由于VBE 中通常是0.65 V 的硅器件(IR2也是发射极电流,并假设作为收藏家或负载所需的电流,同时提供HFE 的足够大)。阻力在电阻B Z Z S I K I V V R *1+-=

,其中,K= 1.2到2(使R1是足够低,以确保有足够的IB )(m in)

2)(FE R E C B h I I I I ===, (m in)FE h 是最低的,特别是可以接受的类型正在使用的晶体管的电流增益。

6、简单晶体管电流源与二极管补偿

温度的变化会改变输出电流由图3电路交付因为VBE 对温度很敏感。温度补偿的依赖可以用图4电路,包括一个标准(作为晶体管的半导体材料相同)与齐纳二极管系列二极管D 为在图像显示在左侧。该二极管压降(VD )的追踪VBE 中由于温度变化和温度,从而大大抵消了对CCS 的依赖。 电阻2

R2R BE z z I V V V -+=,

由于VD= VBE 中= 0.65V ,因此,2

R2R z I V =

, R1的计算方法B Z D Z S I K I V V V R *1+--=

图4补偿电路

这种方法是最有效的齐纳二极管,在 5.6 V 或以上评级。对于小于 5.6 V 时,补偿二极管故障二极管通常不是必需的,因为击穿机理是温度依赖并不像它在上述这个电压击穿二极管的。

7、简单晶体管电流源与LED

另一种方法是取代轻齐纳二极管的发光二极管LED1,如图5。 LED 的电压降(VD )现在用于推导恒压,也有额外的跟踪优势(补偿)VBE 中温度引起的变化。 R2的计算公式为2R2R BE D I V V -=

, R1的计算公式为B

D D S I K I V V *R1+-=,其中ID 是LED 电流。

图5 LED1代替DZ1 图6反馈电路 另一种常见的方法是使用反馈来设置当前和消除对晶体管的VBE 中的依赖。图6显示了一个非常普遍的使用方法与非反相在上面的例子中输入连接到一个电压源和反相输入端连接到的电阻和晶体管的发射极相同的节点。这种方式产生的电压是电阻两端,而不是两个电阻器和晶体管。 (详见上的理想运算放大器的文章 - 在零器。)电流镜上的文章讨论的另一个这些所谓的收益,例如,提高了电流镜。

反馈也被用于两个晶体管发射极电流镜变性。反馈是在某些电流镜使用诸如维德拉电流源和威尔逊电流源,多晶体管的基本特征。

8、其他实际来源

在运放电路的情况下,有时候是理想的注入电流精确已知的反相输入(作为一个信号,例如输入偏移量)和源之间的电压和反相输入端连接一个电阻将接近理想值为电流源V/R。

9、电感式电流源

除其他应用中,图7电路采用LM317稳压器是用来向一个不断在E级电流(开关源)的电子放大器。

图7电感式电流源

10、当前及电压源比较

大部分的电能的来源(主要电力,电池,...)是最好的建模为电压源。这种来源提供恒定的电压,这意味着只要当前从源头上得出的数额在源的能力,但是它的输出电压保持不变。一个理想的电压源规定,如果是由开路加载没有能源(即一个无限阻抗),但方法无限的功率和电流时,负载电阻趋近于零(短路)。这种理论的设备将有一个与源系列零欧姆的输出阻抗。一个真正的世界电压源具有非常低的,但不为零输出阻抗:通常远小于1欧姆。

相反,电流源提供恒定电流,只要负载连接到源码头已经足够低的阻抗。一个理想的电流源将提供没有力气短路和方法无限的能源和负载电阻接近无穷大电压(开路)。一个理想的电流源具有同时与源无限输出阻抗。一个真正的世界电流源具有非常高,但有限的输出阻抗。在晶体管电流源情况下,一(在直流)数兆欧阻抗典型。

一个理想电流源不能被连接到一个理想的开路,因为这会造成正在运行的一个常量,非零电流(从电流源)通过与定义零电流(开放的电路元件)的矛盾。

也不能理想电压源连接到一个理想的短路相关(r = 0),因为这将导致对有限非零元素上定义的电压零电压类似的悖论(短路)。

由于没有理想的品种或来源存在(所有现实世界的例子有限和非零源阻抗),任何电流源,可作为具有相同的源阻抗,反之亦然电压源考虑。这些概念,均由诺顿和戴维南定理。

附件2:外文原文(复印件)

CURRENT SOURCE

A current source is an electrical or electronic device that delivers or absorbs electric current. A current source is the dual of a voltage source. The term constant-current sink is sometimes used for sources fed from a negative voltage supply. Figure 1 shows a schematic for an ideal current source driving a resistor load.

Figure 1

Ideal current sources

In circuit theory, an ideal current source is a circuit element where the current through it is independent of the voltage across it. It is a mathematical model, which real devices can only approach in performance. If the current through an ideal current source can be specified independently of any other variable in a circuit, it is called an independent current source. Conversely, if the current through an ideal current source is determined by some other voltage or current in a circuit, it is called a dependent or controlled current source. Symbols for these sources are shown in Figure 2.

Figure 2

An independent current source with zero current is identical to an ideal open circuit.

For this reason, the internal resistance of an ideal current source is infinite. The voltage across an ideal current source is completely determined by the circuit it is connected to. When connected to a short circuit, there is zero voltage and thus zero power delivered. When connected to a load resistance, the voltage across the source approaches infinity as the load resistance approaches infinity (an open circuit). Thus, an ideal current source could supply unlimited power forever and so would represent an unlimited source of energy. Connecting an ideal open circuit to an ideal non-zero current source is not valid in circuit analysis as the circuit equation would be paradoxical, e.g., 5 = 0.

No real current source is ideal (no unlimited energy sources exist) and all have a finite internal resistance (none can supply unlimited voltage). However, the internal resistance of a physical current source is effectively modeled in circuit analysis by combining a non-zero resistance in parallel with an ideal current source (the Norton equivalent circuit).

Resistor current source

The simplest current source consists of a voltage source in series with a resistor. The current available from such a source is given by the ratio of the voltage across the voltage source to the resistance of the resistor. For a nearly ideal current source, the value of this resistor should be very large but this implies that, for a specified current, the voltage source must be very large. Thus, efficiency is low (due to power loss in the resistor) and it is usually impractical to construct a 'good' current source this way. Nonetheless, it is often the case that such a circuit will provide adequate performance when the specified current and load resistance are small. For example, a 5V voltage source in series with a 4.7k ohms resistor will provide an approximately constant current of 1mA (±5%) to a load resistance in the range of 50 to 450 ohms.

Active current sources

Active current sources have many important applications in electronic circuits. Current sources (current-stable resistors) are often used in place of ohmic resistors in analog integrated circuits to generate a current without causing attenuation at a point in the signal path to which the current source is attached. The collector of a bipolar transistor, the drain of a field effect transistor, or the plate of a vacuum tube naturally behave as current sources (or sinks) when properly connected to an external source of energy (such as a power supply) because the output impedance of these devices is naturally high when used in the current source configuration.

JFET and N-FET current source

A JFET can be made to act as a current source by tying its gate to its source. The current then flowing is the IDSS of the FET. These can be purchased with this connection already made and in this case the devices are called current regulator diodes or constant current diodes or current limiting diodes (CLD). An enhancement mode N channel MOSFET can be used in the circuits listed below.

Simple transistor current source

Figure 3 shows a typical constant current source (CCS). DZ1 is a zener diode which, when reverse biased (as shown in the circuit) has a constant voltage drop across it irrespective of the current flowing through it. Thus, as long as the zener current (IZ) is

above a certain level (called holding current), the voltage across the zener diode (VZ) will be constant. Resistor R1 supplies the zener current and the base current (IB) of NPN transistor (Q1). The constant zener voltage is applied across the base of Q1 and emitter resistor R2. The operation of the circuit is as follows:

V oltage across R2 (VR2) is given by VZ - VBE, where VBE is the base-emitter drop of Q1. The emitter current of Q1 which is also the current through R2 is given by 2

2)(22R V V R V I I BE E R E R -===

.

Figure 3

Since VZ is constant and VBE is also (approximately) constant for a given temperature, it follows that VR2 is constant and hence IE is also constant. Due to transistor action, emitter current IE is very nearly equal to the collector current IC of the transistor (which in turn, is the current through the load). Thus, the load current is constant (neglecting the output resistance of the transistor due to the Early effect) and the circuit operates as a constant current source. As long as the temperature remains constant (or doesn't vary much), the load current will be independent of the supply voltage, R1 and the transistor's gain. R2 allows the load current to be set at any desirable value and is calculated by 2R2R BE E I V V -= or 2

65.02R Z I V R -=, since VBE is typically 0.65 V for a silicon device. (IR2 is also the emitter current and is assumed to be the same as the collector or required load current, provided hFE is sufficiently large). Resistance R1 at resistor R1 is calculated as B

Z Z S I K I V V R *1+-=,where, K = 1.2 to 2 (so that R1 is low enough to ensure adequate IB), (m in)2)(FE R E C B h I I I I ===,and hFE(min) is the lowest acceptable current gain for the particular transistor type being used.

A more common current source in integrated circuits is the current mirror.

Simple transistor current source with diode compensation

Temperature changes will change the output current delivered by the circuit of Figure 3 because VBE is sensitive to temperature. Temperature dependence can be compensated using the circuit of Figure 4 that includes a standard diode D (of the same semiconductor material as the transistor) in series with the Zener diode as shown in the image on the left. The diode drop (VD) tracks the VBE changes due to temperature and thus significantly counteracts temperature dependence of the CCS.

Resistance R2 is now calculated as 2

R2R BE z z I V V V -+=

Since VD = VBE = 0.65 V , Therefore, B Z D Z S I K I V V V R *1+--=.

Figure 4

This method is most effective for Zener diodes rated at 5.6 V or more. For breakdown diodes of less than 5.6 V , the compensating diode is usually not required because the breakdown mechanism is not as temperature dependent as it is in breakdown diodes above this voltage.

Simple transistor current source with LED

Another method is to replace the Zener diode with a light-emitting diode LED1 as shown in Figure 5. The LED voltage drop (VD) is now used to derive the constant voltage and also has the additional advantage of tracking (compensating) VBE

changes due to temperature. R2 is calculated as 2

R2R BE D I V V -=,and R1 as B

D D S I K I V V *R1+-=, where ID is the LED current.

Figure 5 Figure 6

Another common method is to use feedback to set the current and remove the dependence on the Vbe of the transistor. Figure 6 shows a very common approach using an op amp with the non-inverting input connected to a voltage source (such as the Zener in an above example) and the inverting input connected to the same node as the resistor and emitter of the transistor. This way the generated voltage is across the resistor, rather than both the resistor and transistor. (For details, see the article on the ideal op amp - the nullor.) The article on current mirror discusses another example of these so-called gain-boosted current mirrors.

Other practical sources

In the case of opamp circuits sometimes it is desired to inject a precisely known current to the inverting input (as an offset of signal input for instance) and a resistor connected between the source voltage and the inverting input will approximate an ideal current source with value V/R.

Inductor type current source

Amongst other applications, the circuit of Figure 7 using the LM317 voltage regulator is used to present a source of constant current in Class E (switching) electronic amplifiers.

Figure 7

Current and voltage source comparison

Most sources of electrical energy (mains electricity, a battery, ...) are best modeled as voltage sources. Such sources provide constant voltage, which means that as long as the amount of current drawn from the source is within the source's capabilities, its output voltage stays constant. An ideal voltage source provides no energy when it is loaded by an open circuit (i.e. an infinite impedance), but approaches infinite power and current when the load resistance approaches zero (a short circuit). Such a theoretical device would have a zero ohm output impedance in series with the source.

A real-world voltage source has a very low, but non-zero output impedance: often much less than 1 ohm.

Conversely, a current source provides a constant current, as long as the load connected to the source terminals has sufficiently low impedance. An ideal current source would provide no energy to a short circuit and approach infinite energy and voltage as the load resistance approaches infinity (an open circuit). An ideal current source has an infinite output impedance in parallel with the source. A real-world current source has a very high, but finite output impedance. In the case of transistor current sources, impedances of a few megohms (at DC) are typical.

An ideal current source cannot be connected to an ideal open circuit because this would create the paradox of running a constant, non-zero current (from the current source) through an element with a defined zero current (the open circuit). Nor can an ideal voltage source be connected to an ideal short circuit (R=0), since this would result a similar paradox of finite non zero voltage across an element with defined zero voltage (the short circuit).

Because no ideal sources of either variety exist (all real-world examples have finite and non-zero source impedance), any current source can be considered as a voltage source with the same source impedance and vice versa. These concepts are dealt with by Norton's and Thévenin's theorems.

1外文文献翻译原文及译文汇总

华北电力大学科技学院 毕业设计(论文)附件 外文文献翻译 学号:121912020115姓名:彭钰钊 所在系别:动力工程系专业班级:测控技术与仪器12K1指导教师:李冰 原文标题:Infrared Remote Control System Abstract 2016 年 4 月 19 日

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计算机专业外文文献及翻译

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A Wavelet Based Approach for Fast Detection of Internal Fault in Power Transformers The power transformer is one of the most expensive elements of power system and its protection is an essential part of the overall system protection strategy. The differential protection provides the best protection for power transformer. Its operation principle is based on this point that the differential current during an internal fault is higher than normal condition. But, a large transient current (inrush current) can cause mal-operation of differential relays. Then, studies for the improvement of the transformer protection have focused on discrimination between internal short circuit faults and inrush currents in transformers. The magnetizing inrush current has a large second order harmonic component in comparison to internal faults. Therefore , some transformer protection systems are designed to halt operating during the inrush current by sensing this large second order harmonic. The second harmonic component in the magnetizing inrush currents tend to be relatively small in modern large power transformers because of improvements in the power transformer core materials. Also , it has been seen that the fault current can contain higher second order harmonics than the inrush current due to nonlinear fault resistance, CT saturation .the distributed capacitance in the transmission line, which transformer is connected to, or due to the use of extra high voltage underground cables. Various methods have been suggested for overcoming this protection system mal-operation. This paper presents a wavelet based method for discrimination among inrush current, internal short circuit ,external short circuit and energizing and it is not affected by CT saturation and it is able to detect internal faults while transformer energization. Unlike Artificial Neural Network and Fuzzy logic based algorithms. This approach is not system dependent. The operating time of the scheme is less than 10ms. The Daubechies mother wavelet is used with a sample rate of 5 kHz. Then , the differential currents of the three phases are decomposed into two details and only the second level will be considered by using db5 mother wavelet. Discrete Wavelet Transform The wavelet transform is a powerful tool to extract information from the non-stationary signals simultaneously in both time and frequency domains. The ability of the wavelet transform to focus on short time intervals for high-frequency components and long intervals for low-frequency components improves the analysis

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A convection-conduction model for analysis of the freeze-thaw conditions in the surrounding rock wall of a tunnel in permafrost regions Abstract Based on the analyses of fundamental meteorological and hydrogeological conditions at the site of a tunnel in the cold regions, a combined convection-conduction model for air flow in the tunnel and temperature field in the surrounding has been constructed. Using the model, the air temperature distribution in the Xiluoqi No. 2 Tunnel has been simulated numerically. The simulated results are in agreement with the data observed. Then, based on the in situ conditions of sir temperature, atmospheric pressure, wind force, hydrogeology and engineering geology, the air-temperature relationship between the temperature on the surface of the tunnel wall and the air temperature at the entry and exit of the tunnel has been obtained, and the freeze-thaw conditions at the Dabanshan Tunnel which is now under construction is predicted. Keywords: tunnel in cold regions, convective heat exchange and conduction, freeze-thaw. A number of highway and railway tunnels have been constructed in the permafrost regions and their neighboring areas in China. Since the hydrological and thermal conditions changed after a tunnel was excavated,the surrounding wall rock materials often froze, the frost heaving caused damage to the liner layers and seeping water froze into ice diamonds,which seriously interfered with the communication and transportation. Similar problems of the freezing damage in the tunnels also appeared in other countries like Russia, Norway and Japan .Hence it is urgent to predict the freeze-thaw conditions in the surrounding rock materials and provide a basis for the design,construction and

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河南科技学院新科学院 2013届本科毕业生论文(设计) 英文文献及翻译 Foreign capital inflows and welfare in an economy with imperfect competition 学生姓名:王艳杰 所在院系:经济系 所学专业:国际经济与贸易 导师姓名:侯黎杰 完成时间:2013年4月15日

Foreign capital inflows and welfare in an economy with imperfect competition Abstract:This paper examines the resource allocational and welfare effects of exogenous inflows of foreign capital in a general-equilibrium model with oligopolistic competition and unemployment. Although the welfare impact for the short run is ambiguous and dependent upon the strength of excess profits and scale economies relative to unemployment in manufacturing, in the long run additional inflows of foreign capital always improve national welfare with capital mobility. Hence, attracting foreign capital remains a sound policy for economies characterized by imperfect competition, scale economies,and regional unemployment. Keywords: International capital mobility; Imperfect competition; Welfare 1.Introduction The welfare effects of exogenous inflows of foreign capital in the presence of trade restrictions have been extensively studied. Brecher and Diaz Alejandro (1977) show that when imports are subject to tariffs, an introduction of fo reign capital inflows accentuates the tariff distortion and hence reduces national welfare if the import-competing sector is relatively capital-intensive. In contrast, Dei (1985) shows that when imports are restricted by quotas,foreign capital inflows in the presence of foreign-owned capital always improve welfare by depressing the rental and so lowering the payments to existing foreign-owned capital. Recently, Neary (1981), using a common framework for both tariffs and quotas, obtains more general results of foreign capital inflows; the welfare effect of such inflows depends crucially on whether foreign-owned capital exists initially in the home country. In addition, Khan (1982) and Grinols (1991) have examined the effects of foreign capital inflows for a generalized Harris-Todaro economy under tariff protection. Khan finds that the result by Brecher and Diaz Alejandro is still valid even in the presence of unemployment, whereas Grinols argues that increased foreign capital need not be detrimental to welfare if the opportunity costs of labor are sufficiently low. Noteworthy is that the models used by these authors are all based upon the premise of perfect competition along with constant returns-to-scale technology. Although perfect competition serves as a useful assumption in crystallizing theoretical insights, it nevertheless fails to depict many of the real-world phenomena. The real-world economy is characterized, to a large extent, by imperfect competition and economies of scale. The policy implications of imperfect competition and economies

毕业设计(论文)外文资料翻译〔含原文〕

南京理工大学 毕业设计(论文)外文资料翻译 教学点:南京信息职业技术学院 专业:电子信息工程 姓名:陈洁 学号: 014910253034 外文出处:《 Pci System Architecture 》 (用外文写) 附件: 1.外文资料翻译译文;2.外文原文。 指导教师评语: 该生外文翻译没有基本的语法错误,用词准确,没 有重要误译,忠实原文;译文通顺,条理清楚,数量与 质量上达到了本科水平。 签名: 年月日 注:请将该封面与附件装订成册。

附件1:外文资料翻译译文 64位PCI扩展 1.64位数据传送和64位寻址:独立的能力 PCI规范给出了允许64位总线主设备与64位目标实现64位数据传送的机理。在传送的开始,如果回应目标是一个64位或32位设备,64位总线设备会自动识别。如果它是64位设备,达到8个字节(一个4字)可以在每个数据段中传送。假定是一串0等待状态数据段。在33MHz总线速率上可以每秒264兆字节获取(8字节/传送*33百万传送字/秒),在66MHz总线上可以528M字节/秒获取。如果回应目标是32位设备,总线主设备会自动识别并且在下部4位数据通道上(AD[31::00])引导,所以数据指向或来自目标。 规范也定义了64位存储器寻址功能。此功能只用于寻址驻留在4GB地址边界以上的存储器目标。32位和64位总线主设备都可以实现64位寻址。此外,对64位寻址反映的存储器目标(驻留在4GB地址边界上)可以看作32位或64位目标来实现。 注意64位寻址和64位数据传送功能是两种特性,各自独立并且严格区分开来是非常重要的。一个设备可以支持一种、另一种、都支持或都不支持。 2.64位扩展信号 为了支持64位数据传送功能,PCI总线另有39个引脚。 ●REQ64#被64位总线主设备有效表明它想执行64位数据传送操作。REQ64#与FRAME#信号具有相同的时序和间隔。REQ64#信号必须由系统主板上的上拉电阻来支持。当32位总线主设备进行传送时,REQ64#不能又漂移。 ●ACK64#被目标有效以回应被主设备有效的REQ64#(如果目标支持64位数据传送),ACK64#与DEVSEL#具有相同的时序和间隔(但是直到REQ64#被主设备有效,ACK64#才可被有效)。像REQ64#一样,ACK64#信号线也必须由系统主板上的上拉电阻来支持。当32位设备是传送目标时,ACK64#不能漂移。 ●AD[64::32]包含上部4位地址/数据通道。 ●C/BE#[7::4]包含高4位命令/字节使能信号。 ●PAR64是为上部4个AD通道和上部4位C/BE信号线提供偶校验的奇偶校验位。 以下是几小结详细讨论64位数据传送和寻址功能。 3.在32位插入式连接器上的64位卡

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