1TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅲ)
○ High Current Switching Applications
• Compact package suitable for high-density mounting
• Low on-resistance: R on = 205m Ω (max) (@V GS = -2.0 V) R on = 100m Ω (max) (@V GS = -2.5 V) R on = 64m Ω (max) (@V GS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage V DS -20 V Gate-Source voltage V GSS
±10 V DC I D -2.5 Drain current
Drain power dissipation P D
500 mW Channel temperature T ch 150 °C Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm 2
Marking Equivalent Circuit
When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1,2,5,6 : Drain
3 : Gate
4 : Source
JEDEC - JEITA -
TOSHIBA 2-2T1D Weight: 7 mg (typ.) 元器件交易网http://m.wendangku.net/doc/8062451f55270722192ef775.html