SSM6J50TU中文资料

SSM6J50TU中文资料

2007-11-01

1TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅲ)

SSM6J50TU

○ High Current Switching Applications

• Compact package suitable for high-density mounting

• Low on-resistance: R on = 205m Ω (max) (@V GS = -2.0 V) R on = 100m Ω (max) (@V GS = -2.5 V) R on = 64m Ω (max) (@V GS = -4.5 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-Source voltage V DS -20 V Gate-Source voltage V GSS

±10 V DC I D -2.5 Drain current

SSM6J50TU中文资料

Pulse I

SSM6J50TU中文资料

DP

-5

A

Drain power dissipation P D

(Note 1)

500 mW Channel temperature T ch 150 °C Storage temperature range

T stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board.

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm 2

)

Marking Equivalent Circuit

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is

protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

1,2,5,6 : Drain

3 : Gate

4 : Source

JEDEC - JEITA -

TOSHIBA 2-2T1D Weight: 7 mg (typ.) 元器件交易网http://m.wendangku.net/doc/8062451f55270722192ef775.html

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