74HC07中文资料
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May 2003s
HIGH SPEED:
t PD =6ns (TYP .)at V CC =6V s
LOW POWER DISSIPATION:I CC =1μA(MAX.)at T A =25°C s
HIGH NOISE IMMUNITY:
V NIH =V NIL =28%V CC (MIN.)
s
WIDE OPERATING VOLTAGE RANGE:V CC (OPR)=2V to 6V
s
PIN AND FUNCTION COMPATIBLE WITH 74SERIES 07
DESCRIPTION
The M74HC07is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C 2MOS technology.
The internal circuit is composed of 2stages including buffer output,which enables high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.
M74HC07
HEX BUFFER (OPEN
DRAIN)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T &R DIP M74HC07B1R SOP M74HC07M1R
M74HC07RM13TR TSSOP
M74HC07TTR
M74HC07
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INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
TRUTH TABLE
Z :High Impedance
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur.Functional operation under these conditions is
not implied
(*)500mW at 65°C;derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
PIN No SYMBOL NAME AND FUNCTION 1,3,5,9,11,
13
1A to 6A Data Inputs 2,4,6,8,10,
121Y to 6Y Data Outputs 7
GND Ground (0V)
14
V CC
Positive Supply Voltage
A Y L L H
Z
Symbol Parameter
Value Unit V CC Supply Voltage -0.5to +7V V I DC Input Voltage -0.5to V CC +0.5V V O DC Output Voltage -0.5to V CC +0.5
V I IK DC Input Diode Current ±20mA I OK DC Output Diode Current ±20mA I O
DC Output Current
±25mA I CC or I GND DC V CC or Ground Current
±50mA P D
Power Dissipation 500(*)mW T stg Storage Temperature -65to +150
°C T L
Lead Temperature (10sec)
300
°C
Symbol Parameter
Value Unit V CC Supply Voltage 2to 6V V I Input Voltage 0to V CC V V O Output Voltage 0to V CC V T op Operating Temperature -55to 125°C t r ,t f
Input Rise and Fall Time
V CC =2.0V 0to 1000ns V CC =4.5V 0to 500ns V CC =6.0V
0to 400
ns
M74HC07
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DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (C L =50pF,Input t r =t f =6ns)
Symbol
Parameter
Test Condition
Value Unit
V CC (V)T A =25°C -40to 85°C -55to 125°C Min.Typ.
Max.
Min.Max.
Min.Max.
V IH
High Level Input Voltage 2.0 1.5 1.5 1.5V 4.5 3.15 3.15 3.156.0 4.2
4.2
4.2
V IL
Low Level Input Voltage
2.00.50.50.5V
4.5 1.35 1.35 1.356.0 1.8
1.8 1.8V OL
Low Level Output Voltage
2.0I O =20μA 0.00.10.10.1V
4.5I O =20μA 0.00.10.10.16.0I O =20μA 0.00.10.10.14.5I O =4.0mA 0.170.260.330.406.0
I O =5.2mA 0.18
0.260.330.40I I Input Leakage Current
6.0V I =V CC or GND ±0.1±1±1μA I OZ Output Leakage Current
6.0V I =V IH or V IL V O =V CC or GND ±0.5±5±10μA I CC
Quiescent Supply Current
6.0
V I =V CC or GND
1
1020
μA Symbol
Parameter
Test Condition
Value Unit
V CC (V)T A =25°C -40to 85°C -55to 125°C Min.
Typ.Max.Min.
Max.Min.
Max.t THL
Output Transition Time
2.0307595110ns 4.581519226.07131619t PLZ
Propagation Delay Time
2.0R L =1K ?
1090115135ns
4.571823276.06152023t PZL
Propagation Delay Time
2.0R L =1K ?
1790115135ns
4.571823276.0
5
15
20
23
M74HC07
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CAPACITIVE CHARACTERISTICS
1)C PD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.(Refer to Test Circuit).Average operating current can be obtained by the following equation.
I CC(opr)=C PD x V CC x f IN +I CC /6(per gate)
TEST CIRCUIT
L R T =Z OUT of pulse generator (typically 50?)
WAVEFORM :
PROPAGATION DELAY TIME (f=1MHz;50%duty cycle)
Symbol
Parameter
Test Condition
Value Unit
V CC (V)T A =25°C -40to 85°C -55to 125°C Min.
Typ.Max.Min.
Max.Min.
Max.C IN Input Capacitance 5.0510
10
10
pF C OUT Output
Capacitance
5.03pF C PD
Power Dissipation Capacitance (note 1)
5.0
4
pF
M74HC07
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