IRF530N
IRF530NPbF
HEXFET ? Power MOSFET
01/30/04
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
––– 2.15R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/W
R θ
JA
Junction-to-Ambient
–––
62
Thermal Resistance
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Advanced HEXFET ?to its wide acceptance throughout the industry.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating
l 175°C Operating Temperature l Fast Switching
l Fully Avalanche Rated l
Lead-Free
Description
PD - 94962
Absolute Maximum Ratings
Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 17I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12A I DM
Pulsed Drain Current 60P D @T C = 25°C Power Dissipation 70W Linear Derating Factor 0.47W/°C V GS Gate-to-Source Voltage ± 20V I AR Avalanche Current
9.0A E AR Repetitive Avalanche Energy 7.0mJ dv/dt Peak Diode Recovery dv/dt 7.4
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C
Mounting torque, 6-32 or M3 srew
10 lbf?in (1.1N?m)
IRF530NPbF
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Source-Drain Ratings and Characteristics
Starting T J = 25°C, L = 2.3mH
R G = 25?, I AS = 9.0A, V GS =10V (See Figure 12)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Notes:
I SD ≤ 9.0A , di/d t ≤ 410A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T J = 175°C .
Electrical Characteristics @ T = 25°C (unless otherwise specified)
IRF530NPbF
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Vs. Temperature
IRF530NPbF
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Fig 8. Maximum Safe Operating Area
Gate-to-Source Voltage
Drain-to-Source Voltage
Forward Voltage
1
10
1001000
V DS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D , D r a i n -t o -S o u r c e C u r r e n t (A )
IRF530NPbF
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Case Temperature
V V d(on)
r
d(off)
f
V DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
IRF530NPbF
6
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V
DS
Current Sampling Resistors
V GS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
I AS
Vs. Drain Current
V DD
IRF530NPbF
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Peak Diode Recovery dv/dt Test Circuit
V DD
* Reverse Polarity of D.U.T for P-Channel
V GS
*** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET ? power MOSFETs
IRF530NPbF
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TAC Fax: (310) 252-7903
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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawings please refer to the IR website at:
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