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BFS20W中文资料

DISCRETE SEMICONDUCTORS DATA SHEET

book, halfpage

M3D102

BFS20W

NPN medium frequency transistor Product speci?cation1999Apr21

NPN medium frequency transistor

BFS20W

FEATURES

?Low current (max. 25mA)?Low voltage (max. 20V).

?Very low feedback capacitance (typ. 350fF).APPLICATIONS

?IF and VHF applications in thick and thin-film circuits.DESCRIPTION

NPN medium frequency transistor in a SOT323 (SC-70)plastic package.MARKING

Note

1.?=-: Made in Hong Kong.

?=t: Made in Malaysia.

TYPE NUMBER MARKING CODE (1)

BFS20W N1?

PINNING

PIN DESCRIPTION

1base 2emitter 3

collector

Fig.1

Simplified outline (SOT323; SC-70) and symbol.

handbook, halfpage

MAM062

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).Note

1.Refer to SOT323 (SC-70) standard mounting conditions.

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.UNIT

V CBO collector-base voltage open emitter ?30V V CEO collector-emitter voltage open base ?20V V EBO emitter-base voltage open collector

?4V I C collector current (DC)?25mA I CM peak collector current ?25mA I BM peak base current ?200mA P tot total power dissipation T amb ≤25°C; note 1

?200mW T stg storage temperature ?65+150°C T j junction temperature

?150°C T amb operating ambient temperature

?65+150

°C

NPN medium frequency transistor BFS20W

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R th j-a thermal resistance from junction to ambient note1625K/W Note

1.Refer to SOT323 (SC-70) standard mounting conditions.

CHARACTERISTICS

T amb=25°C unless otherwise speci?ed.

SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT I CBO collector cut-off current I E=0; V CB=20V??100nA

I E=0; V CB=20V; T j=100°C??10μA

I EBO emitter cut-off current I C=0; V EB=4V??100nA

h FE DC current gain I C=7mA; V CE=10V4085?

V BE base-emitter voltage I C=7mA; V CE=10V?740900mV

C c collector capacitance I E=i e=0; V CB=10V; f=1MHz?1?pF

C re feedback capacitance I C=0; V CE=10V; f=1MHz?350?fF

f T transition frequency I C=5mA; V CE=10V; f=100MHz360470?MHz

NPN medium frequency transistor BFS20W

Fig.2

DC current gain as a function of collector current; typical values.

V CE =10V.

(1)T amb =150°C.(2)T amb =25°C.(3)T amb =?55°C.

handbook, halfpage

103

102

1MGR830

10?1

110

102

I C (mA)

h FE

(2)(3)

(1)

Fig.3

Collector-emitter saturation voltage as a function of collector current; typical values.

I C /I B =10.

(1)T amb =100°C.(2)T amb =25°C.(3)T amb =?55°C.

handbook, halfpage

MGR831

10?1

110

I C (mA)

V CEsat (mV)

(1)103

102

10102

(2)(3)

Fig.4

Base-emitter voltage as a function of collector current; typical values.

V CE =10V.

(1)T amb =?100°C.(2)T amb =25°C.(3)T amb =150°C.

handbook, halfpage

1000

200MGR832

400

600

800

V BE (mV)10?1

110

102

I C (mA)

(2)

(3)

(1)

Fig.5

Collector current as a function of

collector-emitter voltage; typical values.

T amb =25°C.(1)I B =280μA.(2)I B =230μA.(3)I B =180μA.

(4)I B =130μA.(5)I B =80μA.(6)I B =30μA.

handbook, halfpage

010

V CE (V)

I C

(mA)

(5)

(6)

(1)25

MGR833

2468

(2)

(3)

(4)

NPN medium frequency transistor

BFS20W

PACKAGE OUTLINE

UNIT A 1max b p c D E e 1H E L p Q w v REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE IEC

JEDEC

EIAJ mm

0.1

1.10.8

0.40.3

0.250.10

2.21.8

1.351.15

0.65

e 1.3

2.22.0

0.230.13

0.2

DIMENSIONS (mm are the original dimensions)0.450.15

SOT323

SC-70

w M b p

D e 1

e A

A 1

L p

detail X

H E

E v M A

B y

01 2 mm

scale

A X

Plastic surface mounted package; 3 leads

SOT323

97-02-28

NPN medium frequency transistor BFS20W

DEFINITIONS

Data Sheet Status

Objective speci?cation This data sheet contains target or goal speci?cations for product development. Preliminary speci?cation This data sheet contains preliminary data; supplementary data may be published later. Product speci?cation This data sheet contains ?nal product speci?cations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speci?cation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

NPN medium frequency transistor BFS20W

NOTES

Internet: https://www.wendangku.net/doc/ab12148186.html,

Philips Semiconductors – a worldwide company

? Philips Electronics N.V. 1999

SCA63

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115002/00/01/pp8 Date of release: 1999Apr 21Document order number: 939775005696