12N70中文资料
UNISONIC TECHNOLOGIES CO., LTD
12N70
Power MOSFET
12 Amps, 700 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 12N70 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.
FEATURES
* R DS(ON) = 0.7? @V GS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( C
RSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
1.Gate
*Pb-free plating product number:12N70L
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
12N70-TA3-T 12N70L-TA3-T TO-220 G D S Tube 12N70-TF3-T 12N70L-TF3-T TO-220F G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
ABSOLUTE MAXIMUM RATINGS (T C = 25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage V DSS 700 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 1) I AR 12 A Continuous Drain Current I D 12 A Pulsed Drain Current (Note 1) I DM 48 A
Single Pulsed (Note 2)E AS 790 mJ
Avalanche Energy
Repetitive (Note 1) E AR 24
mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Junction Temperature T J +150 ℃ Operating Temperature T OPR -55 ~ +150 ℃ Storage Temperature T STG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T C =25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 μA 700 V Drain-Source Leakage Current I DSS V DS = 600 V, V GS = 0 V 10μA Gate-Source Leakage Current I GSS V GS = ±30 V, V DS = 0 V ±100nA Breakdown Voltage Temperature
Coefficient
BV △DSS /△T J I D = 250 μA, Referenced to 25°C 0.7 V/℃
ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250μA 2.0 4.0V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, I D = 6.0A 0.55 0.7?DYNAMIC CHARACTERISTICS Input Capacitance C ISS 1480 1900pF
Output Capacitance C OSS 200 270pF
Reverse Transfer Capacitance C RSS V DS = 25 V, V GS = 0 V, f = 1MHz 25 35pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 30 70ns
Turn-On Rise Time t R 115 240ns Turn-Off Delay Time t D(OFF) 95 200ns
Turn-Off Fall Time t F V DD = 300V, I D = 12A, R G = 25? (Note 4, 5) 85 180ns Total Gate Charge Q G 42 54nC
Gate-Source Charge Q GS 8.6 nC
Gate-Drain Charge Q GD
V DS = 480V,I D = 12A, V GS = 10 V
(Note 4, 5)
21 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD V GS = 0 V, I S = 12A 1.4V
Maximum Continuous Drain-Source Diode
Forward Current
I S 12 A
Maximum Pulsed Drain-Source Diode
Forward Current
I SM 48 A
Reverse Recovery Time t RR 380 ns Reverse Recovery Charge Q RR
V GS = 0 V, I S = 12A,
dI F /dt = 100 A/μs (Note 4) 3.5 μC Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 10mH, I AS = 12A, V DD = 50V, R G = 25?, Starting T J = 25°C 3. I SD ≤ 12A, di/dt ≤200A/s, V DD ≤BV DSS Starting T J = 25°C 4. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature.
TEST CIRCUITS AND WAVEFORMS
V DD
V GS (Driver)
I SD (D.U.T.)
Body Diode
Forward Voltage Drop
V DS (D.U.T.)
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Fig. 1B Peak Diode Recovery dv/dt Waveforms
TEST CIRCUITS AND WAVEFORMS(Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform
R D
10V
L
V DD
V
BV DSS
I
D(t)
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
TYPICAL CHARACTERISTICS
101010Gate-Source Voltage, V GS (V)
Transfer Characteristics
1010101010Drain-Source Voltage, V GS (V)
On-Resign Characteristics
TYPICAL CHARACTERISTICS
D
r a
i n C u r r e n t , I D (A
)
O n -R e s i s t a n c e , R D S (O N ) (m Ω)
0.01
Single Pulse
100
10-1
10-2T h e r m a l R e s p o n s e , Z θJ C (t )
10-5
10-310Square Wave Pulse Duration, t 1(sec)
(t)=2.272.Duty Factor,D=t JM -T C
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information