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UMF9NTR;中文规格书,Datasheet资料

Transistors

Rev.A 1/5

Power management (dual transistors)

UMF9N

2SC5585 and 2SK3019 are housed independently in a UMT package.

z Application

Power management circuit

z Features

1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

z Structure

Silicon epitaxial planar transistor

z Equivalent circuits

z Packaging specifications

UMF9N UMT6F9TR 3000

Type Package Marking Code

Basic ordering unit (pieces)

z Dimensions (Units : mm)

Transistors

Rev.A 2/5

z Absolute maximum ratings (T a=25°C) Tr1

Parameter

Symbol

V CBO

V CEO V EBO I C I CP

P C Tj Tstg Limits 15126500

150(TOTAL)150?55 to +1501.0?1?2

Unit V V V mA A mW °C °C

Collector-base voltage Collector-emitter voltage Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature ?1 Single pulse P W =1ms

?2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

Tr2

Parameter

?1 P W ≤10ms Duty cycle ≤50%

?2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.Symbol V DSS V GSS I D I DRP P D

Tch Tstg Limits 30±20100200150(TOTAL)150?55 to +150?1?1?2

Unit

V V mA I DP 200mA mA I DR 100mA mW °C °C

Drain-source voltage

Gate-source voltage

Drain current

Reverse drain

current Total power dissipation Channel temperature

Range of storage temperature Continuous

Continuous Pulsed

Pulsed

z Electrical characteristics (T a=25°C) Tr1

Parameter

Symbol Min.Typ.Max.Unit Conditions

V CB =10V, I E =0mA, f =1MHz

Transition frequency

f T ?320?MHz V CE =2V, I E =?10mA, f =100MHz BV CEO 12??V I C =1mA Collector-emitter breakdown voltage BV CBO 15??V I C =10μA Collector-base breakdown voltage BV EBO 6??V I E =10μA Emitter-base breakdown voltage I CBO ??100nA V CB =15V Collector cut-off current I EBO ??100nA V EB =6V

Emitter cut-off current

V CE(sat)?100250mV I C =200mA, I B =10mA Collector-emitter saturation voltage h FE 270?680?V CE =2V, I C =10mA

DC current gain

Cob ?7.5?pF

Collector output capacitance

Transistors

Rev.A 3/5

Electrical characteristic curves Tr1

Fig.1 Grounded emitter propagation

characteristics

BASE TO EMITTER VOLTAGE : V BE (V)

C O L L E C T O R C U R R E N T : I C (m A )

COLLECTOR CURRENT : I C (mA)Fig.2 DC current gain vs.

collector current D C C U R R E N T G A I N : h F E

Fig.3 Collector-emitter saturation voltage

vs. collector current ( Ι )

COLLECTOR CURRENT : I C (mA)

C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (m V )

Fig.4 Collector-emitter saturation voltage

vs. collector current ( ΙΙ

)

COLLECTOR CURRENT : I C (mA)

C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (m V )

COLLECTOR CURRENT : I C (mA)Fig.5 Base-emitter saturation voltage

vs. collector current B A S E R S A T U R A T I O N V O L T A G E : V B E (s a t ) (m V )

Fig.6 Gain bandwidth product

vs. emitter current

EMITTER CURRENT : I E (mA)

T R A N S I T I O N F R E Q U E N C Y : f T (M H z )

1000

100

Fig.7 Collector output capacitance

vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage

110

100

1000

C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )

M I T T E R I N P U T C A P A C I T A N C E : C i b (p F )EMITTER TO BASE VOLTAGE : V EB (V)

EMITTER CURRENT : V CE (V)

Fig.8 Safe operation area

0.001T R A N S I T I O N F R E Q U E N C Y : I C (A )

0.01

0.1

Transistors

Rev.A 4/5

Tr2

D R A I N C U R R

E N T : I D (A )

GATE-SOURCE VOLTAGE : V GS (V)

Fig.9 Typical transfer characteristics

G A T E T H R E S H O L D V O L T A G E : V G S (t h ) (V )

CHANNEL TEMPERATURE : Tch (°C)Fig.10 Gate threshold voltage vs.

channel temperature

S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)

DRAIN CURRENT : I D (A)

Fig.11 Static drain-source on-state

resistance vs. drain current ( Ι )

S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)

DRAIN CURRENT : I D (A)Fig.12 Static drain-source on-state

resistance vs. drain current ( ΙΙ )

GATE-SOURCE VOLTAGE : V GS (V)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)

Fig.13 Static drain-source on-state

resistance vs. gate-source voltage

CHANNEL TEMPERATURE : Tch (°C)

S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (?)

Fig.14 Static drain-source on-state

resistance vs. channel temperature

F O R W A R D T R A N S F E R A D M I T T A N C E : |Y f s | (S )

DRAIN CURRENT : I D (A)

Fig.15 Forward transfer admittance vs.

drain current

R E V E R S E D R A I N C U R R E N T : I D R (A )

SOURCE-DRAIN VOLTAGE : V SD (V)

Fig.16 Reverse drain current vs.

source-drain voltage ( Ι )

R E V E R S E D R A I N C U R R E N T : I D R (A )

SOURCE-DRAIN VOLTAGE : V SD (V)

Fig.17 Reverse drain current vs.

source-drain voltage ( ΙΙ )

Transistors

Rev.A 5/5

C A P A C I T A N C E : C (p F )

DRAIN-SOURCE VOLTAGE : V DS (V)Fig.18 Typical capacitance vs.

drain-source voltage

S W I T H I N G T I M E : t (n s )

DRAIN CURRENT : I D (mA)

Fig.19 Switching characteristics

Appendix1-Rev2.0

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Appendix

分销商库存信息: ROHM

UMF9NTR