X0202NN1BA2中文资料
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X02 Series
SENSITIVE
1.25A SCRs
September 2000 - Ed: 3
MAIN FEATURES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the X02 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interruptors, overvoltage crowbar protection in low power supplies,capacitive ignition circuits, ...
Available in though-hole or surface-mount packages, these devices are optimized in forward voltage drop and inrush current capabilities, for reduced power losses and high reliability in harsh environments.
Symbol Value Unit I T(RMS) 1.25A V DRM /V RRM
600 and 800V I GT
50 to 200
μA
ABSOLUTE RATINGS (limiting values)
Symbol Parameter
Value Unit I T(RMS) RMS on-state current (180° conduction angle)TO-92TI = 55°C 1.25
A
SOT -223Ttab = 95°C IT (AV) Average on-state current (180° conduction angle)
TO-92TI = 55°C 0.8A
SOT -223Ttab = 95°C I TSM Non repetitive surge peak on-state current
tp = 8.3 ms Tj = 25°C 25A tp = 10 ms 22.5I 2t I 2t Value for fusing
tp = 10 ms Tj = 25°C 2.5A 2S dI/dt Critical rate of rise of on-state current I G = 2 x I GT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50A/μs I GM Peak gate current
tp = 20 μs
Tj = 125°C 1.2A P G(AV)Average gate power dissipation Tj = 125°C
0.2W T stg Tj
Storage junction temperature range Operating junction temperature range
- 40 to + 150- 40 to + 125
°C
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
THERMAL RESISTANCES
S = Copper surface under tab
PRODUCT SELECTOR
Symbol Test Conditions
X02xx
Unit
02
05I GT
V D = 12 V R L = 140 ?
MIN.-20μA MAX.200
50
V GT MAX.0.8V V GD V D = V DRM R L = 3.3 k ? R GK = 1 k ?Tj = 125°C
MIN.0.1V V RG I RG = 10 μA
MIN.8V I H I T = 50 mA R GK = 1 k ?MAX.5mA I L I G = 1 mA R GK = 1 k ?MAX.6
mA dV/dt V D = 67 % V DRM R GK = 1 k ? Tj = 110°C MIN.10
15V/μs V TM I TM = 2.5 A tp = 380 μs Tj = 25°C MAX. 1.45V V to Threshold voltage Tj = 125°C MAX.0.9V R d Dynamic resistance Tj = 125°C MAX.200m ?I DRM I RRM
V DRM = V RRM R GK = 1 k ?
Tj = 25°C MAX.
5μA Tj = 125°C 500Symbol Parameter
Value Unit R th(j-l)Junction to leads (DC)TO-9260°C/W
R th(j-t)Junction to tab (DC)SOT -22325R th(j-a)
Junction to ambient (DC)
TO-92150S = 5 cm 2
SOT -223
60
Part Number
Voltage
Sensitivity
Package
600 V
800 V
X0202MA X 200 μA TO-92X0202MN X
200 μA SOT -223X0202NA X 200 μA TO-92X0202NN X
200 μA SOT -223X0205MA X 50 μA TO-92X0205MN X
50 μA SOT -223X0205NA X 50 μA TO-92X0205NN
X
50 μA
SOT -223
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ORDERING INFORMATION
OTHER INFORMATION
Note : xx = sensitivity, y = voltage
Part Number Marking
Weight Base Quantity
Packing mode
X02xxyA 1BA2X02xxyA 0.2 g 2500Bulk X02xxyA 2BL2X02xxyA 0.2 g 2000Ammopack X0202yN 5BA4X2y 0.12 g 1000Tape & reel
X0205yN 5BA4
X5y
0.12 g
1000
Tape & reel
Fig. 1: Maximum average power dissipation versus average on-state current.
Fig. 2-1: Average and D.C. on-state current versus lead temperature (SOT -223/TO-92).
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Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (SOT -223/TO-92).
Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration (SOT -223/TO-92).
Fig. 4: Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values).
Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values).
Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values).
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Fig. 8: Surge peak on-state current versus number of cycles.
Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp <10ms, and corresponding value of I2t.
Fig. 10: On-state characteristics (maximum values).
Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35μm)(SOT -223).
PACKAGE MECHANICAL DATA
X02 Series
PACKAGE MECHANICAL DATA
FOOTPRINT DIMENSIONS (in millimeters)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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