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EE-SX1046;中文规格书,Datasheet资料

EE-SX1046;中文规格书,Datasheet资料
EE-SX1046;中文规格书,Datasheet资料

38

EE-SX1046 Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive)

EE-SX1046

■Dimensions

Note:All units are in millimeters unless otherwise indicated.

■Features

?With a horizontal sensing aperture.?PCB mounting type.

?High resolution with a 0.5-mm-wide aperture.

■Absolute Maximum Ratings (Ta =25°C)

1.Refer to the temperature rating chart if the ambient temper-ature exceeds 25°C.

2.The pulse width is 10 μs maximum with a frequency of 100Hz.

https://www.wendangku.net/doc/cc11765250.html,plete soldering within 10 seconds.

■Electrical and Optical Characteristics (Ta = 25°C)

Internal Circuit

K

A C

E

Terminal No. Name A Anode K Cathode C Collector E

Emitter

Dimensions Tolerance 3 mm max.

±0.33 < mm ≤ 6 ±0.3756 < mm ≤ 10 ±0.4510 < mm ≤ 18 ±0.5518 < mm ≤ 30

±0.65

9 min.0.3 max.

Four, 0.25

Optical axis

Cross section BB Cross section AA

Four, 0.25

Optical axis

Optical axis

0.25 max.

0.5±0.1

10±0.3

0.5±0.1

6.55

2.5

Unless otherwise specified, the tolerances are as shown below.Item

Symbol Rated value Emitter

Forward current I F 50 mA

(see note 1)Pulse forward cur-rent

I FP 1 A

(see note 2)Reverse voltage

V R 4 V Detector

Collector–Emitter voltage

V CEO 30 V Emitter–Collector voltage

V ECO ---Collector current I C 20 mA Collector dissipa-tion

P C 100 mW (see note 1)Ambient tem-perature

Operating Topr –25°C to 85°C Storage

Tstg –30°C to 100°C Soldering temperature

Tsol

260°C

(see note 3)

Item

Symbol

Value

Condition

Emitter

Forward voltage V F 1.2 V typ., 1.5 V max.I F = 30 mA Reverse current

I R 0.01 μA typ., 10 μA max.V R = 4 V Peak emission wavelength

λP 920 nm typ.

I F = 20 mA

Detector

Light current I L 1.2 mA min., 14 mA max.I F = 20 mA, V CE = 5 V Dark current I D 2 nA typ., 200 nA max.V CE = 10 V, 0 l x Leakage current

I LEAK ------Collector–Emitter saturated volt-age

V CE (sat)0.1 V typ., 0.4 V max.I F = 20 mA, I L = 0.1 mA Peak spectral sensitivity wave-length

λP 850 nm typ.V CE = 10 V

Rising time tr 4 μs typ.V CC = 5 V, R L = 100 Ω, I L = 5 mA Falling time

tf

4 μs typ.

V CC = 5 V, R L = 100 Ω, I L = 5 mA

Be sure to read Precautions on page 25.

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EE-SX1046 Photomicrosensor (Transmissive) 39

■Engineering Data

Dissipation Temperature Rating

Voltage Characteristics (Typical)

Characteristics (Typical)

Light Current vs. Collector ?Emitter Voltage Characteristics (Typical)

Dark Current vs. Ambient Temperature Characteristics (Typical)

Input Output

Input

Output

90 %10 %

Sensing Position Characteristics (Typical)

Response Time Measurement Circuit

Ambient temperature Ta (°C)

C o l l e c t o r d i s s i p a t i o n P C (m W )

Forward voltage V F (V)

F o r w a r d c u r r e n t I F (m A )

F o r w a r d c u r r e n t I F (m A )

Forward current I F (mA)

L i g h t c u r r e n t I L (m A )

Collector ?Emitter voltage V CE (V)L i g h t c u r r e n t I L (m A )

Ambient temperature Ta (°C)

Load resistance R L (k Ω)

I F P C

T a = ?30°C T a = 25°C T a = 70°C

Ta = 25°C V CE = 10 V

I F = 40 mA I F = 30 mA I F = 20 mA I F = 10 mA

T a = 25°C

V CE = 10 V 0 l x

I F = 20 mA V CE = 5 V

V CC = 5 V Ta = 25°C

R e s p o n s e t i m e t r , t f (μs )

R e l a t i v e l i g h t c u r r e n t I L (%)

D a r k c u r r e n t I D (n A )

I F = 50 mA Ambient temperature Ta (°C)

Relative Light Current vs. Ambi-ent Temperature Characteristics (Typical)

Response Time vs. Load Resist-ance Characteristics (Typical)

Distance d (mm) 100

80

60

40200?0.5?0.75

?0.2500.250.50.75

120

d

I F = 20 mA V CE = 5 V T a = 25°C

(C e n t e r o f o p t i c a l a x i s )

Sensing Position Characteristics (Typical)

Distance d (mm)

R e l a t i v e l i g h t c u r r e n t I L (%)

100

80

60

40

20

0?1.5

?1.0?0.500.5 1.0 1.5

120

I F = 20 mA V CE = 10 V T a = 25°C (Center of optical axis)

d

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分销商库存信息: OMRON

EE-SX1046

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