IRFL4105中文资料

IRFL4105

HEXFET ?

Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

1/14/99

Description

l Surface Mount

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching

l

Fully Avalanche Rated

SO T -223

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Parameter

Typ.

Max.

Units

R θJA Junction-to-Amb. (PCB Mount, steady state)*90120R θJA

Junction-to-Amb. (PCB Mount, steady state)**

50

60

Thermal Resistance

°C/W

Parameter

Max.

Units

I D @ T A = 25°C Continuous Drain Current, V GS @ 10V** 5.2I D @ T A = 25°C Continuous Drain Current, V GS @ 10V* 3.7I D @ T A = 70°C Continuous Drain Current, V GS @ 10V* 3.0I DM

Pulsed Drain Current

30P D @T A = 25°C Power Dissipation (PCB Mount)** 2.1W P D @T A = 25°C Power Dissipation (PCB Mount)* 1.0W

Linear Derating Factor (PCB Mount)*8.3mW/°C

V GS Gate-to-Source Voltage

± 20V E AS Single Pulse Avalanche Energy 110mJ I AR Avalanche Current

3.7A E AR Repetitive Avalanche Energy 0.10mJ dv/dt Peak Diode Recovery dv/dt

5.0

V/ns T J, T STG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

A

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