MJW21195中文资料
MJW21195 (PNP)
MJW21196 (NPN)
Preferred Devices
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
?Total Harmonic Distortion Characterized
?High DC Current Gain –
h FE = 20 Min @ I C = 8 Adc
?Excellent Gain Linearity
?High SOA: 2.25 A, 80 V, 1 Second
MAXIMUM RATINGS
Device Package Shipping
ORDERING INFORMATION
MJW21195TO–247
https://www.wendangku.net/doc/f811606806.html,
30 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
MJW21196TO–24730 Units/Rail
I C , COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product Figure 2. Typical Current Gain
Bandwidth Product
, C U R R E N T B A N D W I D T H P R O D U C T (M H z )
T PNP MJW21195
NPN MJW21196
I C , COLLECTOR CURRENT (AMPS)
6.5
6.05.55.04.5
4.02.52.07.57.03.53.0F , C U R R E N T B A N D W I D T H P R O D U C T (M H z )
T F
h F E , D C C U R R E N T G A I N
V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I C , C O L L E C T O R C U R R E N T (A )
V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
h F E , D C C U R R E N T G A I N
V B E (o n ), B A S E -E M I T T E R V O L T A G E (V O L T S )
Figure 9. Typical Saturation Voltages I C , COLLECTOR CURRENT (AMPS)
S A T U R A T I O N V O L T A G E (V O L T S )
Figure 10. Typical Saturation Voltages
I C , COLLECTOR CURRENT (AMPS)
S A T U R A T I O N V O L T A G E (V O L T S )
Figure 11. Typical Base–Emitter Voltage I C , COLLECTOR CURRENT (AMPS)Figure 12. Typical Base–Emitter Voltage
I C , COLLECTOR CURRENT (AMPS)
V B E (o n ), B A S E -E M I T T E R V O L T A G E (V O L T S )
PNP MJW21195
NPN MJW21196
3.02.52.01.51.00.50
1.4
1.21.00.80.60.40.20
10
1.0
0.1
There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate I C – V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 13 is based on T J(pk) = 150°C; T C is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
TYPICAL CHARACTERISTICS
Figure 13. Active Region Safe Operating Area V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)100
10
1
0.1
PNP MJW21195
NPN MJW21196
I C , C O L L E C T O R C U R R E N T (A M P S )
Figure 14. Active Region Safe Operating Area
V
CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
10
1
0.1
I C , C O L L E C T O R C U R R E N T (A M P S )
Figure 15. MJW21195 Typical Capacitance V R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )
Figure 16. MJW21196 Typical Capacitance
V R , REVERSE VOLTAGE (VOLTS)
C , C A P A C I T A N C E (p F )
8.0 ?
Figure 17. Typical Total Harmonic Distortion
Figure 18. Total Harmonic Distortion Test Circuit
FREQUENCY (Hz)
T H D , T O T A L H A R M O N I C D I S T O R T I O N (%)
1.21.1
1.00.90.80.70.6
100000
10000100010010
PACKAGE DIMENSIONS
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198
2.
2.CONTROLLING DIMENSION: MILLIMETER.
STYLE 3:
PIN 1.BASE
2.COLLECTOR
3.EMITTER
0.25 (0.010)
M
Y Q
S
DIM MIN MAX MIN MAX INCHES
MILLIMETERS A 19.720.30.7760.799B 15.315.90.6020.626C 4.7 5.30.1850.209D 1.0 1.40.0390.055E 1.27 REF 0.050 REF F 2.0 2.40.0790.094G 5.5 BSC 0.216 BSC H 2.2 2.60.0870.102J 0.40.80.0160.031K 14.214.80.5590.583L 5.5 NOM 0.217 NOM P 3.7 4.30.1460.169Q 3.55 3.650.1400.144R 5.0 NOM 0.197 NOM U 5.5 BSC 0.217 BSC V
3.0 3.4
0.1180.134
TO–247CASE 340K–01ISSUE C
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