2N6798中文资料

N-CHANNEL ENHANCEMENT

MODE TRANSISTOR

FEATURES

?V (BR)DSS = 200V

?I D = 5.5A ?R DSON = 0.40W

V DS Drain–Source Voltage V GS Gate–Source Voltage

I D

Drain Current Continuous T C = 25°C

T C = 100°C

I DM Drain Current Pulsed I A Avalanche Current P D Total Device Dissipation @ T C = 25°C

T C = 100°C

T J , T STG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS R q JC Thermal Resistance Junction to Case R q JC Thermal Resistance Junction to Ambient T L Maximum Lead Temperature 1.5mm from Case for

10 secs.

200V ±20V 5.5A 3.5A 22A 3.1A 25W 10W

–55 to +150°C 5.0°CW 175°CW 300°C

MECHANICAL DATA

Dimensions in mm (inches)

TO–39 METAL PACKAGE

ABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated)

PIN 1 – Source

Underside View

PIN 2 – Gate

PIN 3 – Drain

ELECTRICAL CHARACTERISTICS (T J= 25°C unless otherwise stated)

1)Pulse test : Pulse Width < 300m s ,Duty Cycle < 2%

2)Pulse width limited by maximum juction temperature