基于半导体激光器的脉冲整形技术

基于半导体激光器的脉冲整形技术

林平1,2，刘百玉1，缑永胜1，白永林1，王博1，白晓红1，秦君军1，朱炳利1，杨文正1，

朱少岚1，高存孝1，欧阳娴1

(1.中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室，陕西西安710119；

2.中国科学院大学，北京100049)

摘要：论述一种新的激光脉冲整形方法-利用任意形状的整形电脉冲直接驱动半导体激光器，产生与电脉冲形状一致的激光脉冲，作为高功率激光装置的种子光源。使用GaAs 场效应管作为开关器件，使用超宽带脉冲触发场效应管产生整形电脉冲，引入阻抗渐变微带技术克服了触发脉冲损耗对级联场效应管数量限制，将整形电脉冲脉冲宽度扩展到10ns 。以整形电脉冲直接驱动半导体激光器，可产生脉宽为10ns ，时域调节精度为330ps 的任意整形激光脉冲。关键词：激光脉冲整形；GaAs 场效应管；开关特性；半导体激光器；阻抗渐变微带技术中图分类号：TN249文献标志码：A 文章编号：1007-2276(2014)01-0103-05

Laser pulse shaping technology based on semiconductor laser Lin Ping 1,2,Liu Baiyu 1,Gou Yongsheng 1,Bai Yonglin 1,Wang Bo 1,Bai Xiaohong 1,Qin Junjun 1,

Zhu Bingli 1,Yang Wenzheng 1,Zhu Shaolan 1,Gao Cunxiao 1,OuYang Xian 1

(1.State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academy

of Sciences,Xi ′an 710119,China;2.University of the Chinese Academy of Sciences,Beijing 100049,China)

Abstract:Pulse shaping technique is of great significance for high power laser facility.In this paper,a new method used in laser pulse shaping system was proposed.An arbitrary waveform generator was fabricated to generate shaping electrical pulse.GaAs Field Effect Transistor (FET)has good ability of generating voltage 鄄controlled current and on 鄄off characteristic,while the semiconductor laser contains direct modulate characteristic.The unit 鄄pulse was generated based on the on 鄄off characteristic of GaAs FET,and then the arbitrary waveform electrical pulse was generated by stacking a set of unit 鄄pulses.Impedance tapered micro 鄄strip line was designed to maintain the consistency of each unit 鄄pulse.The arbitrary waveform electrical pulse was used as shaping electrical pulse to modulate the semiconductor laser directly to realize the laser pulse shaping.With this method,a laser pulse waveform was generated with duration less than 10ns,330ps time 鄄domain adjustment.The experiment results show that the shaped laser pulse is determined only by shaping electrical pulse.

Key words:laser pulse shaping;GaAs FET;on 鄄off characteristic;semiconductor laser;

impedance tapered micro 鄄strip

收稿日期：2013-05-12；修订日期：2013-06-13

基金项目：国家自然科学基金(11205238)

作者简介：林平(1987-)，男，硕士生，主要从事激光脉冲整形方面的研究。

Email:linping@https://www.wendangku.net/doc/f716576239.html, 导师简介：刘百玉(1964-)，男，研究员，主要从事超快电子学方面的研究。Email:liu-baiyu@https://www.wendangku.net/doc/f716576239.html, 第43卷第1期

红外与激光工程2014年1月Vol.43No.1Infrared and Laser Engineering Jan .2014